Schottky Barrier Rectifier JSCJ SBDF20100CT Offering High Current Capability and Enhanced Transient Protection
Key Attributes
Model Number:
SBDF20100CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
2uA@100V
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
820mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDF20100CT
Package:
TO-220F
Product Description
Product Overview
The SBD20100CT and SBDF20100CT are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. Key features include guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Codes: 20100CT, F20100CT
- Packaging: TO-220-3L, TO-220F
- Marking: 20100CT, SBD(F)20100CT
- Molding Compound: Green molding compound device (indicated by solid dot) or normal device.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | SBD20100CT | SBDF20100CT |
|---|---|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||||
| Peak repetitive reverse voltage | VRRM | 100 | V | ✔ | ✔ | |||
| Working peak reverse voltage | VRWM | 100 | V | ✔ | ✔ | |||
| DC blocking voltage | VR | 100 | V | ✔ | ✔ | |||
| RMS reverse voltage | VR(RMS) | 70 | V | ✔ | ✔ | |||
| Average rectified output current | IO | 20 | A | ✔ | ✔ | |||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 150 | A | ✔ | ✔ | |||
| Junction temperature | Tj | -55 | 150 | ✔ | ✔ | |||
| Storage temperature | Tstg | -55 | 150 | ✔ | ✔ | |||
| ELECTRICAL CHARACTERISTICS | ||||||||
| Reverse voltage | V(BR) | VR=100V | 100 | V | ✔ | ✔ | ||
| Reverse current | IR | VR=100V | 1.0 | mA | ✔ | ✔ | ||
| Forward voltage | VF | IF=5A | 0.82 | V | ✔ | ✔ | ||
| Forward voltage | VF | IF=10A | 0.72 | V | ✔ | ✔ | ||
| Forward voltage | VF | IF=10A | 0.60 | V | ✔ | ✔ | ||
| Thermal resistance from junction to ambient | RJA | 62.5 | /W | ✔ | ||||
| Thermal resistance from junction to case | RJc | Tc=25 | 2.0 | 3.0 | /W | ✔ | ✔ | |
| TYPICAL CHARACTERISTICS | ||||||||
| Forward voltage | VF(typ) | @Tj=125 | 0.68 | V | ✔ | ✔ | ||
| Total Capacitance | CTOT | f = 1 MHz, Tj = 25 | 150 | pF | ✔ | ✔ | ||
2410121810_JSCJ-SBDF20100CT_C2924071.pdf
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