High Current Capacity Schottky Diode JSCJ SBD20H150CTB with Low Forward Voltage Drop and Performance

Key Attributes
Model Number: SBD20H150CTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
100nA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
820mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBD20H150CTB
Package:
TO-220-3L
Product Description

Product Overview

The SBD20H150CTB and SBDF20H150CTB are high-efficiency Schottky barrier rectifiers designed for low power loss and high current capability. They feature a low forward voltage drop and are constructed with a guard ring die for transient protection. These rectifiers are suitable for applications requiring efficient power conversion.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Device Code: SBD20H150CTB, SBDF20H150CTB
  • Marking: SBD20H150CTB, SBD(F)20H150CTB
  • Color: Green molding compound device (if solid dot present)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnitSBD20H150CTBSBDF20H150CTB
Reverse VoltageVRRM150V
VRWM150V
VR150V
VR(RMS)105V
Average Rectified Output CurrentIO20A
Non-Repetitive Peak Forward Surge CurrentIFSM8.3ms half sine wave200A
Thermal ResistanceRJAJunction to ambient75/W
RJcJunction to case, Tc=252.03.0/W
Junction TemperatureTj175
Storage TemperatureTstg-55+175
Forward VoltageVFIF=10A, Tj=250.58V
IF=10A, Tj=1500.76V
VFIF=5A, Tj=250.50.70V
IF=5A, Tj=1500.65V
Reverse CurrentIRVR=150V, Tj=251.0mA
Total CapacitanceCTOTf = 1 MHz, Tj = 2550pF

2410121810_JSCJ-SBD20H150CTB_C2924052.pdf

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