Rectifier Diodes Plastic Encapsulate with JSCJ US3M High Surge Current and Broad Voltage Range

Key Attributes
Model Number: US3M
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.7V@3A
Current - Rectified:
3A
Mfr. Part #:
US3M
Package:
SMBG
Product Description

US3A THRU US3M SMBG Plastic-Encapsulate Diodes

High Efficient Rectifier Diodes with high surge current capability, designed for rectifier applications. These diodes offer a broad voltage range from 50V to 1000V.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: X (From A To M)
  • Polarity: Color band denotes cathode
  • Material: Plastic-Encapsulate Diodes

Technical Specifications

ItemSymbolUnitTest ConditionsUS3AUS3BUS3DUS3GUS3JUS3KUS3M
Maximum RMS VoltageVRVRMS50752004006008001000
Repetitive Peak Reverse VoltageVRRMV50752004006008001000
Average Forward CurrentIF(AV)A60Hz Half-sine wave Resistance loadTL=753.03.03.03.03.03.03.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave 1 cycleTA=25100100100100100100100
Operation Junction and Storage Temperature RangeTJ,TSTG -55 ~ +150
Thermal Resistance(Typical)RJ-A/WBetween junction and ambient47
Thermal Resistance(Typical)RJ-L/WBetween junction and terminal1.7
Peak Forward VoltageVFVIF =3.0A1.31.31.31.31.31.31.3
Peak Reverse CurrentIRRM1AVRM=VRRM, TA =2510101010101010
Peak Reverse CurrentIRRM2AVRM=VRRM, TA =100100100100100100100100
Maximum reverse recovery timetrrnsIF=0.5A,IR=1.0A,Irr=0.25A50505050505050

2410121844_JSCJ-US3M_C2923960.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.