General Purpose Zener Diode JSCJ AD-BZT52B20S with Plastic Encapsulation and Planar Die Construction
Key Attributes
Model Number:
AD-BZT52B20S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
55Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Impedance(Zzk):
225Ω
Mfr. Part #:
AD-BZT52B20S
Package:
SOD-323
Product Description
Product Overview
The AD-BZT52B*S series is a range of plastic-encapsulated Zener diodes designed for general-purpose, medium current applications. These diodes feature a planar die construction and are AEC-Q101 qualified, ensuring reliability for automotive and industrial use.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. (JSCJ)
- Origin: China
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type Number | Marking | Zener Voltage (V) (IZT = 5mA) | Max Zener Impedance (ZZT @ IZT = 5mA) () | Max Reverse Current (IR @ VR) (A) | Temp. Coeff. of Zener Voltage (IZTC @ IZT = 5mA) (mV/C) |
| AD-BZT52B2V4S | 2WX | 2.35 - 2.45 | 100 | 50 @ 1.0V | -3.5 |
| AD-BZT52B2V7S | 2W1 | 2.65 - 2.75 | 100 | 20 @ 1.0V | -3.5 |
| AD-BZT52B3V0S | 2W2 | 2.94 - 3.06 | 95 | 10 @ 1.0V | -3.5 |
| AD-BZT52B3V3S | 2W3 | 3.23 - 3.37 | 95 | 5 @ 1.0V | -3.5 |
| AD-BZT52B3V6S | 2W4 | 3.53 - 3.67 | 90 | 5 @ 1.0V | -3.5 |
| AD-BZT52B3V9S | 2W5 | 3.82 - 3.98 | 90 | 3 @ 1.0V | -3.5 |
| AD-BZT52B4V3S | 2W6 | 4.21 - 4.39 | 90 | 3 @ 1.0V | -3.5 |
| AD-BZT52B4V7S | 2W7 | 4.61 - 4.79 | 80 | 3 @ 2.0V | -3.5 |
| AD-BZT52B5V1S | 2W8 | 5.00 - 5.20 | 60 | 2 @ 2.0V | -2.7 |
| AD-BZT52B5V6S | 2W9 | 5.49 - 5.71 | 40 | 1 @ 2.0V | -2.0 |
| AD-BZT52B6V2S | 2WA | 6.08 - 6.32 | 10 | 3 @ 4.0V | 0.4 |
| AD-BZT52B6V8S | 2WB | 6.66 - 6.94 | 15 | 2 @ 4.0V | 1.2 |
| AD-BZT52B7V5S | 2WC | 7.35 - 7.65 | 15 | 1 @ 5.0V | 2.5 |
| AD-BZT52B8V2S | 2WD | 8.04 - 8.36 | 15 | 0.7 @ 5.0V | 3.2 |
| AD-BZT52B9V1S | 2WE | 8.92 - 9.28 | 15 | 0.5 @ 6.0V | 3.8 |
| AD-BZT52B10S | 2WF | 9.80 - 10.20 | 20 | 0.2 @ 7.0V | 4.5 |
| AD-BZT52B11S | 2WG | 10.78 - 11.22 | 20 | 0.1 @ 8.0V | 5.4 |
| AD-BZT52B12S | 2WH | 11.76 - 12.24 | 25 | 0.1 @ 8.0V | 6.0 |
| AD-BZT52B13S | 2WI | 12.73 - 13.26 | 30 | 0.1 @ 8.0V | 7.0 |
| AD-BZT52B15S | 2WJ | 14.70 - 15.30 | 30 | 0.1 @ 10.5V | 9.2 |
| AD-BZT52B16S | 2WK | 15.68 - 16.32 | 40 | 0.1 @ 11.2V | 10.4 |
| AD-BZT52B18S | 2WL | 17.64 - 18.36 | 45 | 0.1 @ 12.6V | 12.4 |
| AD-BZT52B20S | 2WM | 19.60 - 20.40 | 55 | 0.1 @ 14.0V | 14.4 |
| AD-BZT52B22S | 2WN | 21.56 - 22.44 | 55 | 0.1 @ 15.4V | 16.4 |
| AD-BZT52B24S | 2WO | 23.52 - 24.48 | 70 | 0.1 @ 16.8V | 18.4 |
| AD-BZT52B27S | 2WP | 26.46 - 27.54 | 80 | 0.1 @ 18.9V | 21.4 |
| AD-BZT52B30S | 2WQ | 29.40 - 30.60 | 80 | 0.1 @ 21.0V | 24.4 |
| AD-BZT52B33S | 2WR | 32.34 - 33.66 | 80 | 0.1 @ 23.1V | 27.4 |
| AD-BZT52B36S | 2WS | 35.28 - 36.72 | 90 | 0.1 @ 25.2V | 30.4 |
| AD-BZT52B39S | 2WT | 38.22 - 39.78 | 130 | 0.1 @ 27.3V | 33.4 |
| Parameter | Symbol | Value | Unit |
| Forward voltage @ IF = 10mA | VF | 0.9 | V |
| Power dissipation | PD | 200 | mW |
| Thermal resistance junction to ambient | RJA | 625 | C/W |
| Operating junction and storage temperature range | Tj, Tstg | -55 ~ 150 | C |
2410121523_JSCJ-AD-BZT52B20S_C2975597.pdf
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