Low RDS on N Channel MOSFET JSCJ CJ3134K KF designed for portable electronics and battery management
Key Attributes
Model Number:
CJ3134K KF
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
RDS(on):
380mΩ@4.5V,650mA
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
79pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
CJ3134K KF
Package:
SOT-723
Product Description
Product Overview
The CJ3134K is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifts.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJ3134K
- Package: SOT-723
- Material: Plastic-Encapsulate
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Typical Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current (note 1) | ID | 0.75 | A | |||
| Pulsed Drain Current (tp=10s) | IDM | 1.8 | A | |||
| Power Dissipation (note 1) | PD | 150 | mW | |||
| Thermal Resistance from Junction to Ambient (note 1) | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | ||||
| STATIC CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | µA | ||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =250µA | 0.35 | 0.54 | 1.1 | V |
| Drain-source on-resistance (note 2) | RDS (on) | VGS =4.5V, ID =0.65A | 270 | 380 | mΩ | |
| VGS =2.5V, ID =0.55A | 320 | 450 | mΩ | |||
| VGS =1.8V, ID =0.45A | 390 | 800 | mΩ | |||
| Forward transconductance (note 2) | gFS | VDS =10V, ID =0.8A | 1.6 | S | ||
| Diode forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 79 | 120 | pF | |
| Output capacitance | Coss | VDS =16V,VGS =0V,f =1MHz | 13 | 20 | pF | |
| Reverse transfer capacitance | Crss | VDS =16V,VGS =0V,f =1MHz | 9 | 15 | pF | |
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time (note 3) | td(on) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 6.7 | ns | ||
| Turn-on rise time (note 3) | tr | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 4.8 | ns | ||
| Turn-off delay time (note3) | td(off) | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 17.3 | ns | ||
| Turn-off fall time (note 3) | tf | VGS=4.5V,VDS=10V, ID =500mA,RGEN=10Ω | 7.4 | ns | ||
2410121314_JSCJ-CJ3134K-KF_C62503.pdf
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