Power Rectifier JSCJ SBDF20100TCTB with Guard Ring Die Construction and High Average Output Current
Key Attributes
Model Number:
SBDF20100TCTB
Product Custom Attributes
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Current - Rectified:
10A
Mfr. Part #:
SBDF20100TCTB
Package:
TO-220F
Product Description
Product Overview
The SBD20100TCTB and SBDF20100TCTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and low forward voltage drop, making them suitable for various power applications. These rectifiers feature a Guard Ring Die Construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate Diodes
- Color: Green molding compound device (if indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | F20100TCTB | SBD20100TCTB |
| Peak repetitive reverse voltage | VRRM | 100 | V | |||||
| Working peak reverse voltage | VRWM | V | ||||||
| DC blocking voltage | VR | 100 | V | |||||
| RMS reverse voltage | VR(RMS) | 70 | V | |||||
| Average rectified output current | IO | 20 | A | |||||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 150 | A | |||||
| Thermal resistance from junction to ambient | RJA | 2.0 | /W | |||||
| Junction temperature | Tj | 150 | ||||||
| Storage temperature | Tstg | -55 | +150 | |||||
| Reverse voltage | V(BR) | IR=1mA | 100 | V | ||||
| Reverse current | IR | VR=100V | 5.0 | uA | ||||
| Forward voltage | VF | IF=5A, Tj=25 | 0.50 | V | ||||
| Forward voltage | VF | IF=5A, Tj=125 | 0.54 | V | ||||
| Forward voltage | VF | IF=10A, Tj=25 | 0.62 | V | ||||
| Forward voltage | VF | IF=10A, Tj=125 | 0.66 | V | ||||
| Forward voltage | VF | IO=20A | 0.75 | V | ||||
| Thermal resistance from junction to case | RJc | Tc=25 | 62.5 | /W |
2410121810_JSCJ-SBDF20100TCTB_C2924072.pdf
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