Power MOSFET JSCJ CJU100N03 Featuring Low Gate Body Leakage Current and Solid Green Molding Compound
Key Attributes
Model Number:
CJU100N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
580pF
Pd - Power Dissipation:
90W
Input Capacitance(Ciss):
5.7nF
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
CJU100N03
Package:
TO-252-2L
Product Description
Product Overview
The CJU100N03 is an N-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for power switching applications and offers advantages such as good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. The device is specified for avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: U100N03
- Package Type: TO-252-2L
- Molding Compound: Solid dot indicates Green molding compound.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 4.5 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =20A | 6.5 | 9.0 | m | |
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1.0 | A | ||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 2734 | pF | ||
| Output capacitance | Coss | 300 | ||||
| Reverse transfer capacitance | Crss | 244 | ||||
| Total gate charge | Qg | VDS=15V, VGS=10V, ID=50A | 49 | nC | ||
| Gate-source charge | Qgs | 8.3 | ||||
| Gate-drain charge | Qg | 10 | ||||
| Turn-on delay time | td(on) | VDD=30V,ID=1A, RL=15,VGS=10V, RG=6 | 7 | ns | ||
| Turn-on rise time | tr | 29 | ||||
| Turn-off delay time | td(off) | 28 | ||||
| Turn-off fall time | tf | 10 | ||||
| Drain-source diode forward voltage | VSD | GS V =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 100 | A | |||
| Pulsed drain-source diode forward current | ISM | 400 | A | |||
| Gate resistance | Rg | f =1MHz | 2.0 |
2410121810_JSCJ-CJU100N03_C2910355.pdf
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