Schottky Barrier Diode JSCJ B5818WS SK Plastic Encapsulate for Low Voltage and Free Wheeling Circuits
Key Attributes
Model Number:
B5818WS SK
Product Custom Attributes
Reverse Leakage Current (Ir):
9A
Non-Repetitive Peak Forward Surge Current:
9A
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
550mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5818WS SK
Package:
SOD-323
Product Description
Product Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS are Schottky Barrier Diodes designed for low voltage, high frequency inverters, free wheeling, and polarity protection applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-323
- Material: Plastic-Encapsulate
Technical Specifications
| Model | Non-repetitive peak reverse voltage (VRM) | Peak repetitive peak reverse voltage (VRRM) | Working peak reverse voltage (VRWM) | DC blocking voltage (VR) | RMS reverse voltage (VR(RMS)) | Average rectified output current (IO) | Peak forward surge current @t=8.3ms (IFSM) | Repetitive peak forward current (IFRM) | Power dissipation (Pd) | Thermal resistance junction to ambient (RJA) | Reverse breakdown voltage (V(BR)) @IR=1mA | Reverse voltage leakage current (IR) | Forward voltage (VF) @IF=1A | Forward voltage (VF) @IF=3A | Diode capacitance (CD) @VR=4V, f=1MHz | Storage temperature (TSTG) | Junction temperature (TJ) | Marking |
| B5817WS | 20V | 20V | 20V | 20V | 14V | 1A | 9A | 1.5A | 250mW | 400/W | 20V | 1mA @VR=20V | 0.45V | 0.75V | 120pF | -55~+150 | 125 | SJ |
| B5818WS | 30V | 30V | 30V | 30V | 21V | 1A | 9A | 1.5A | 250mW | 400/W | 30V | 1mA @VR=30V | 0.55V | 0.875V | 120pF | -55~+150 | 125 | SK |
| B5819WS | 40V | 40V | 40V | 40V | 28V | 1A | 9A | 1.5A | 250mW | 400/W | 40V | 1mA @VR=40V | 0.6V | 0.9V | 120pF | -55~+150 | 125 | SL |
2410121317_JSCJ-B5818WS-SK_C22625.pdf
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