86--136 6733 2386
quality Voltage Regulation JSCJ AZ23C13W Dual Zener Diodes with 200mW Power Dissipation and Lead Free Options factory
quality Voltage Regulation JSCJ AZ23C13W Dual Zener Diodes with 200mW Power Dissipation and Lead Free Options factory

Voltage Regulation JSCJ AZ23C13W Dual Zener Diodes with 200mW Power Dissipation and Lead Free Options

Key Attributes
Model Number: AZ23C13W
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
25Ω
Diode Configuration:
1 Pair Common Anode
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
12.4V~14.1V
Zener Voltage(Nom):
-
Impedance(Zzk):
110Ω
Mfr. Part #:
AZ23C13W
Package:
SOT-323
Product Description

Product Description

The AZ23C2V7W-AZ23C39W series features dual Zener diodes in a common anode configuration, offering a 200mW power dissipation rating. These diodes are ideally suited for automatic insertion and provide a tight tolerance for the voltage difference between the two diodes within a single case (5%). A common cathode style is also available (DZ series), and lead-free versions are offered. They are suitable for various voltage regulation and stabilization applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Material: Plastic-Encapsulate Diodes
  • Package: SOT-323
  • Certifications: Lead free version available

Technical Specifications

Type NumberMarking CodeZener Voltage Range (VZ) (V)Min Reverse Voltage (VR) @ IZT=5.0mA (V)Maximum Zener Impedance (ZZT) @ IZT=5.0mA ()Typical Temperature Coefficient (Tc) (%/)Forward Voltage (VF) @ IF = 10mA (V)Power Dissipation (Pd) (mW)
AZ23C2V7WKD12.5-2.950083-0.0650.9200
AZ23C3V0WKD22.8-3.250095-0.0600.9200
AZ23C3V3WKD33.1-3.550095-0.0550.9200
AZ23C3V6WKD43.4-3.850095-0.0550.9200
AZ23C3V9WKD53.7-4.150095-0.0500.9200
AZ23C4V3WKD64.0-4.650095-0.0350.9200
AZ23C4V7WKD74.4-5.050078-0.0150.9200
AZ23C5V1WKD84.8-5.448060+0.0050.9200
AZ23C5V6WKD95.2-6.040040+0.0200.9200
AZ23C6V2WKDA5.8-6.620010+0.0300.9200
AZ23C6V8WKDB6.4-7.21508.0+0.0450.9200
AZ23C7V5WKDC7.0-7.9507.0+0.0500.9200
AZ23C8V2WKDD7.7-8.7507.0+0.0550.9200
AZ23C9V1WKDE8.5-9.65010+0.0650.9200
AZ23C10WKDF9.4-10.67015+0.0650.9200
AZ23C11WKDG10.4-11.67020+0.0700.9200
AZ23C12WKDH11.4-12.79020+0.0750.9200
AZ23C13WKDI12.4-14.111025+0.0800.9200
AZ23C15WKDJ13.8-15.611030+0.0800.9200
AZ23C16WKDK15.3-17.117040+0.0900.9200
AZ23C18WKDL16.8-19.117050+0.0900.9200
AZ23C20WKDM18.8-21.222050+0.0900.9200
AZ23C22WKDN20.8-23.322055+0.0900.9200
AZ23C24WKDO22.8-25.622080+0.0900.9200
AZ23C27WKDP25.1-28.925080+0.0900.9200
AZ23C30WKDQ28-3225080+0.0900.9200
AZ23C33WKDR31-3525080+0.0900.9200
AZ23C36WKDS34-3825090+0.0900.9200
AZ23C39WKDT37-4130090+0.1100.9200

2410121844_JSCJ-AZ23C13W_C2910242.pdf

Related Products
quality digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free factory
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.