Power Switching P Channel MOSFET JSCJ CJ3139K Featuring Low RDSon and Compact SOT 23 Package

Key Attributes
Model Number: CJ3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
700mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
170pF
Gate Charge(Qg):
-
Mfr. Part #:
CJ3139K
Package:
SOT-23
Product Description

Product Overview

This P-Channel MOSFET features a lead-free, surface-mount SOT-23 package. It offers low RDS(on) for efficient switching and operates at low logic-level gate drive. Ideal for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Package: SOT-23
  • Certifications: Lead Free Product

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Electrical CharacteristicsV(BR)DSSVGS = 0V, ID =-250A-20V
IDSSVDS =-20V,VGS = 0V-1A
IGSSVGS =10V, VDS = 0V20A
VGS(th)VDS =VGS, ID =-250A-0.35-0.45V
RDS(on)VGS =-4.5V, ID =-0.8A430520m
CapacitanceCissVDS =-16V,VGS =0V,f =1MHz113170pF
Coss1525pF
Crss915pF
Switching Characteristicstd(on)VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=109ns
tr5.8ns
td(off)32.7ns
tf20.3ns

2410121844_JSCJ-CJ3139K_C2890149.pdf

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