JSCJ 2N7002 G N Channel MOSFET Featuring High Saturation Current and Low Resistance in SOT 23 Package
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002 is an N-Channel MOSFET in a SOT-23 package. It features a high-density cell design for low RDS(ON), acting as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 1.6 | V | |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=20 V | 80 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| On-state Drain Current | ID(ON) | VGS=10 V, VDS=7 V | 500 | mA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=500mA | 0.9 | 2.5 | ||
| Drain-Source On-Resistance | RDS(on) | VGS=5 V, ID=50mA | 1.1 | 7 | ||
| Forward Transconductance | gfs | VDS=10 V, ID=200mA | 80 | ms | ||
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 0.5 | 3.75 | V | |
| Drain-source on-voltage | VDS(on) | VGS=5V, ID=50mA | 0.05 | 0.375 | V | |
| Diode Forward Voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| Turn-on Time | td(on) | VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25 | 20 | ns | ||
| Turn-off Time | td(off) | VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25 | 40 | ns |
2409272231_JSCJ-2N7002-G_C164913.pdf
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