Power MOSFET JSCJ CJB130SN10 N Channel Device Featuring Low Gate Charge and Excellent RDS ON Performance
Key Attributes
Model Number:
CJB130SN10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Pd - Power Dissipation:
250W
Output Capacitance(Coss):
821pF
Input Capacitance(Ciss):
6.66nF
Gate Charge(Qg):
91nC@10V
Mfr. Part #:
CJB130SN10
Package:
TO-263-2L
Product Description
Product Overview
The CJB130SN10 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for high-efficiency power supplies and secondary synchronous rectifier applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Device Code: CJB130SN10
- Package: TO-263-2L
- Marking: B130SN10 XXXX (Solid dot indicates Green molding compound device)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 100 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1.0 (TJ=25) | 100 (TJ=125) | A | |
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 4.0 | V | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =12A | 4.3 | 5.5 | m | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =100KHz | 13320 | pF | ||
| Output capacitance | Coss | 1642 | pF | |||
| Reverse transfer capacitance | Crss | 34 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=22A | 91 | nC | ||
| Gate-source charge | Qgs | 23 | nC | |||
| Gate-drain charge | Qgd | 13 | nC | |||
| Turn-on delay time | td(on) | VDS=50V,ID=22A , VGS=10V,RG=2.2 | 28.2 | ns | ||
| Turn-on rise time | tr | 7.5 | ns | |||
| Turn-off delay time | td(off) | 81.9 | ns | |||
| Turn-off fall time | tf | 20.1 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 130 | A | |||
| Pulsed drain-source diode forward current | ISM | 390 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 130 | A | |||
| Pulsed Drain Current | IDM | 390 | A | |||
| Single Pulsed Avalanche Energy | EAS | 600 | mJ | |||
| Power Dissipation | PD | 250 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance Junction to Case | RJC | 0.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2411081729_JSCJ-CJB130SN10_C5182734.pdf
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