Load Switch Dual N Channel MOSFET JSCJ CJCD2005 with ESD Protection and Compact DFNWB2x3 6L C Package

Key Attributes
Model Number: CJCD2005
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-
RDS(on):
12.5mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
200pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.8nF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
CJCD2005
Package:
DFNWB-6-EP(3x2)
Product Description

Product Overview

The CJCD2005 is a Dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. The device is housed in a DFNWB2x3-6L-C package.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Product Series: CJCD2005
  • Package Type: DFNWB2x3-6L-C
  • Material: Plastic-Encapsulate

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
MAXIMUM RATINGS
Drain-Source VoltageVDS20V
Gate-Source VoltageVGS±12V
Continuous Drain CurrentID8A
Pulsed Drain CurrentIDM*50A
Thermal Resistance from Junction to AmbientRθJA83.3°C/W
Junction TemperatureTj150°C
Storage TemperatureTstg-55~+150°C
Lead Temperature for Soldering Purposes(1/8'' from case for 10 s)TL260°C
STATIC PARAMETERS
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =250µA20V
Zero gate voltage drain currentIDSSVDS =16V,VGS = 0V1µA
Gate-body leakage currentIGSSVGS =±4.5V, VDS = 0V±1µA
VGS =±8V, VDS = 0V±10µA
Gate threshold voltage (note 1)VGS(th)VDS =VGS, ID =250µA0.41V
Drain-source on-resistance (note 1)RDS(on)VGS =4.5V, ID =3A9.5
VGS =4.0V, ID =3A9.7
VGS =3.8V, ID =3A10.6
VGS =3.1V, ID =3A12.5
VGS =2.5V, ID =3A16
Forward tranconductance (note 1)gFSVDS =5V, ID =7A9S
Diode forward voltage(note 1)VSDIS=1A, VGS = 0V1.2V
DYNAMIC PARAMETERS (note 2)
Input CapacitanceCissVDS =10V,VGS =0V,f =1MHz230pF
Output CapacitanceCoss180pF
Reverse Transfer CapacitanceCrss75pF
SWITCHING PARAMETERS(note 2)
Turn-on delay timetd(on)VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω2.5ns
Turn-on rise timetr7.2ns
Turn-off delay timetd(off)49ns
Turn-off fall timetf108ns

2411121115_JSCJ-CJCD2005_C504182.pdf

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