Planar Die Medium Current Zener Diode JSCJ MMBZ5229B Suitable for General Purpose Voltage Regulation
Key Attributes
Model Number:
MMBZ5229B
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
22Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
300mW
Zener Voltage(Range):
4.09V~4.52V
Zener Voltage(Nom):
4.3V
Mfr. Part #:
MMBZ5229B
Package:
SOT-23
Product Description
Product Overview
The MMBZ5221B-MMBZ5259B series are general-purpose, medium-current Zener diodes featuring planar die construction. They are ideally suited for automated assembly processes. These diodes offer a wide range of Zener voltages from 2.4V to 39V, making them versatile for various voltage regulation applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23 Plastic-Encapsulated Diodes
- Marking: See table on page 2 for marking code
Technical Specifications
| Type Number | Marking Code | Nominal Zener Voltage (V) | Test Current (mA) | Maximum Zener Impedance () @ IZT | Maximum Reverse Leakage Current (A) @ VR = 0.25mA | Forward Voltage (V) @ IF = 10mA | Power Dissipation (mW) | Thermal Resistance (/W) | Operation Junction and Storage Temperature Range () |
| MMBZ5221B | KC1 | 2.4 | 20 | 30 | 100 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5222B | KC2 | 2.5 | 20 | 30 | 100 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5223B | KC3 | 2.7 | 20 | 30 | 75 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5225B | KC5 | 3.0 | 20 | 30 | 50 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5226B | KG1 | 3.3 | 20 | 28 | 25 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5227B | KG2 | 3.6 | 20 | 24 | 15 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5228B | KG3 | 3.9 | 20 | 23 | 10 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5229B | KG4 | 4.3 | 20 | 22 | 5.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5230B | KG5 | 4.7 | 20 | 19 | 5.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5231B | KE1 | 5.1 | 20 | 17 | 5.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5232B | KE2 | 5.6 | 20 | 11 | 5.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5233B | KE3 | 6.0 | 20 | 7 | 5.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5234B | KE4 | 6.2 | 20 | 7 | 5.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5235B | KE5 | 6.8 | 20 | 5 | 3.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5236B | KF1 | 7.5 | 20 | 6 | 3.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5237B | KF2 | 8.2 | 20 | 8 | 3.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5238B | KF3 | 8.7 | 20 | 8 | 3.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5239B | KF4 | 9.1 | 20 | 10 | 3.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5240B | KF5 | 10 | 20 | 17 | 3.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5241B | KH1 | 11 | 20 | 22 | 2.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5242B | KH2 | 12 | 20 | 30 | 1.0 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5243B | KH3 | 13 | 9.5 | 13 | 0.5 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5244B | KH4 | 14 | 9.0 | 15 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5245B | KH5 | 15 | 8.5 | 16 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5246B | KJ1 | 16 | 7.8 | 17 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5247B | KJ2 | 17 | 7.4 | 19 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5248B | KJ3 | 18 | 7.0 | 21 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5249B | KJ4 | 19 | 6.6 | 23 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5250B | KJ5 | 20 | 6.2 | 25 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5251B | KK1 | 22 | 5.6 | 29 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5252B | KK2 | 24 | 5.2 | 33 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5253B | KK3 | 25 | 5.0 | 35 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5254B | KK4 | 27 | 5.0 | 41 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5255B | KK5 | 28 | 4.5 | 44 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5256B | KM1 | 30 | 4.2 | 49 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5257B | KM2 | 33 | 3.8 | 58 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5258B | KM3 | 36 | 3.4 | 70 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
| MMBZ5259B | KM4 | 39 | 3.2 | 80 | 0.1 | 0.9 | 300 | 417 | -55~+150 |
2410121547_JSCJ-MMBZ5229B_C2910212.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
