Power MOSFET JSCJ CJAC80N03 N Channel Device with Special Process Technology and High ESD Capability
Key Attributes
Model Number:
CJAC80N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
792pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
4.824nF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
108nC@10V
Mfr. Part #:
CJAC80N03
Package:
PDFNWB-8L-EP(5x6)
Product Description
Product Overview
The CJAC80N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general-purpose applications, hard switched and high-frequency circuits, and Uninterruptible Power Supplies. Key features include high density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent package for heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Part Number: CJAC80N03
- Product Type: N-Channel Power MOSFET
- Package: PDFNWB5x6-8L
- Marking: CJAC80N03 = Part No., Solid dot = Pin1 indicator, XX = Code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 80 | A | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulsed Avalanche Energy | EAS | 70 | mJ | |||
| Power Dissipation | PD | Ta=25 | 2.0 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8'' from case for 10s) | 260 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.4 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 3.0 | mΩ | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =20A | 4.3 | mΩ | ||
| Forward transconductance | gFS | VDS =10V, ID =20A | 24 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 2412 | pF | ||
| Output capacitance | Coss | 420 | pF | |||
| Reverse transfer capacitance | Crss | 396 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=25V, ID=14A | 54 | nC | ||
| Gate-source charge | Qgs | 4.1 | nC | |||
| Gate-drain charge | Qgd | 8.2 | nC | |||
| Turn-on delay time | td(on) | 19 | ns | |||
| Turn-on rise time | tr | VDS=15V,RL=0.75Ω, VGS=10V,RG=3Ω | 44 | ns | ||
| Turn-off delay time | td(off) | 58 | ns | |||
| Turn-off fall time | tf | 33 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 80 | A | |||
| Pulsed drain-source diode forward current | ISM | 320 | A | |||
2411121115_JSCJ-CJAC80N03_C504096.pdf
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