Medium Current Zener Diode JSCJ AD-BZT52B9V1S Plastic Encapsulated Planar Die Construction AEC-Q101
Key Attributes
Model Number:
AD-BZT52B9V1S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
15Ω
Diode Configuration:
1 Independent
Zener Voltage(Range):
8.92V~9.28V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
9.1V
Impedance(Zzk):
100Ω
Mfr. Part #:
AD-BZT52B9V1S
Package:
SOD-323
Product Description
Product Overview
The AD-BZT52B*S series is a range of plastic-encapsulated Zener diodes designed for general-purpose, medium current applications. Featuring a planar die construction and AEC-Q101 qualification, these diodes offer reliable performance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. (JSCJ)
- Origin: China
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type Number | Marking | Zener Voltage VZ @ IZT (V) | Test Current IZT (mA) | Maximum Zener Impedance ZZT @ IZT () | Maximum Reverse Current IR (A) | Temperature Coefficient of Zener Voltage IZTC (mV/C) |
| AD-BZT52B2V4S | 2WX | 2.35 ~ 2.45 | 5 | 100 | 50 | -3.5 |
| AD-BZT52B2V7S | 2W1 | 2.65 ~ 2.75 | 5 | 100 | 20 | -3.5 |
| AD-BZT52B3V0S | 2W2 | 2.94 ~ 3.06 | 5 | 95 | 10 | -3.5 |
| AD-BZT52B3V3S | 2W3 | 3.23 ~ 3.37 | 5 | 95 | 5 | -3.5 |
| AD-BZT52B3V6S | 2W4 | 3.53 ~ 3.67 | 5 | 90 | 5 | -3.5 |
| AD-BZT52B3V9S | 2W5 | 3.82 ~ 3.98 | 5 | 90 | 3 | -3.5 |
| AD-BZT52B4V3S | 2W6 | 4.21 ~ 4.39 | 5 | 90 | 3 | -3.5 |
| AD-BZT52B4V7S | 2W7 | 4.61 ~ 4.79 | 5 | 80 | 3 | -3.5 |
| AD-BZT52B5V1S | 2W8 | 5.00 ~ 5.20 | 5 | 60 | 2 | -2.7 |
| AD-BZT52B5V6S | 2W9 | 5.49 ~ 5.71 | 5 | 40 | 1 | -2.0 |
| AD-BZT52B6V2S | 2WA | 6.08 ~ 6.32 | 5 | 10 | 3 | 0.4 |
| AD-BZT52B6V8S | 2WB | 6.66 ~ 6.94 | 5 | 15 | 2 | 1.2 |
| AD-BZT52B7V5S | 2WC | 7.35 ~ 7.65 | 5 | 15 | 1 | 2.5 |
| AD-BZT52B8V2S | 2WD | 8.04 ~ 8.36 | 5 | 15 | 0.7 | 3.2 |
| AD-BZT52B9V1S | 2WE | 8.92 ~ 9.28 | 5 | 15 | 0.5 | 3.8 |
| AD-BZT52B10S | 2WF | 9.80 ~ 10.20 | 5 | 20 | 0.2 | 4.5 |
| AD-BZT52B11S | 2WG | 10.78 ~ 11.22 | 5 | 20 | 0.1 | 5.4 |
| AD-BZT52B12S | 2WH | 11.76 ~ 12.24 | 5 | 25 | 0.1 | 6.0 |
| AD-BZT52B13S | 2WI | 12.73 ~ 13.26 | 5 | 30 | 0.1 | 7.0 |
| AD-BZT52B15S | 2WJ | 14.70 ~ 15.30 | 5 | 30 | 0.1 | 9.2 |
| AD-BZT52B16S | 2WK | 15.68 ~ 16.32 | 5 | 40 | 0.1 | 10.4 |
| AD-BZT52B18S | 2WL | 17.64 ~ 18.36 | 5 | 45 | 0.1 | 12.4 |
| AD-BZT52B20S | 2WM | 19.60 ~ 20.40 | 5 | 55 | 0.1 | 14.4 |
| AD-BZT52B22S | 2WN | 21.56 ~ 22.44 | 5 | 55 | 0.1 | 16.4 |
| AD-BZT52B24S | 2WO | 23.52 ~ 24.48 | 5 | 70 | 0.1 | 18.4 |
| AD-BZT52B27S | 2WP | 26.46 ~ 27.54 | 2 | 80 | 0.1 | 21.4 |
| AD-BZT52B30S | 2WQ | 29.40 ~ 30.60 | 2 | 80 | 0.1 | 24.4 |
| AD-BZT52B33S | 2WR | 32.34 ~ 33.66 | 2 | 80 | 0.1 | 27.4 |
| AD-BZT52B36S | 2WS | 35.28 ~ 36.72 | 2 | 90 | 0.1 | 30.4 |
| AD-BZT52B39S | 2WT | 38.22 ~ 39.78 | 2 | 130 | 0.1 | 33.4 |
| Parameter | Symbol | Value | Unit |
| Forward voltage @ IF = 10mA | VF | 0.9 | V |
| Power dissipation | PD | 200 | mW |
| Thermal resistance from junction to ambient | RJA | 625 | C/W |
| Operating junction and storage temperature range | Tj, Tstg | -55 ~ 150 | C |
2410121523_JSCJ-AD-BZT52B9V1S_C2975604.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
