High voltage IGBT device JSCJ CGR75N120F2KAD offering fast soft recovery diode and low Vce saturation voltage
Key Attributes
Model Number:
CGR75N120F2KAD
Product Custom Attributes
Td(off):
245ns
Pd - Power Dissipation:
395W
Td(on):
64ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
60pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-40℃~+175℃
Gate Charge(Qg):
348nC@15V
Switching Energy(Eoff):
2.6mJ
Turn-On Energy (Eon):
6mJ
Input Capacitance(Cies):
7.239nF
Pulsed Current- Forward(Ifm):
225A
Output Capacitance(Coes):
269pF
Mfr. Part #:
CGR75N120F2KAD
Package:
TO-247-3L
Product Description
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CGR75N120F2KAD
The CGR75N120F2KAD is a high-performance IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure. It offers a low Collector-Emitter Saturation Voltage (Vce(sat)) and a positive temperature coefficient, making it suitable for parallel applications. Key features include low switching loss, fast and soft recovery freewheeling diode, and good EMI behavior. It is designed for applications such as Solar, UPS & FPC, Welders, and Energy Storage.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: TO-247PLUS
- Marking: R75N120F2KAD
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | ±20 | V | |||
| Gate-Emitter transient voltage | ±30 | V | ||||
| Collector Current, Limited by TJmax | IC | 120 | A | |||
| Collector Current @TC=100 | IC | 75 | A | |||
| Plused Collector Current, tp limited by TJmax | ICpulse | 225 | A | |||
| Turn-off latching current | ILM(1) | Vcc =600V, VGE = 15 V, TJ ≤ 150 °C. | 225 | A | ||
| Continuous Diode Forward Current, Limited by TJmax | IF | 120 | A | |||
| Continuous Diode Forward Current @TC=100 | IF | 75 | A | |||
| Diode Pulsed Current, Limited by TJmax | IFM | 225 | A | |||
| Power Dissipation @TC=25 | PD | 395 | W | |||
| Power Dissipation @TC =100 | PD | 197 | ||||
| Operating Junction Temperature | TJ | -40 | 175 | °C | ||
| Storage Temperature | TSTG | -55 | 150 | °C | ||
| Maximum lead temperature for soldering | TL | 260 | °C | |||
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | RJC | 0.38 | °C/W | |||
| Maximum Diode Junction-to-Case | RJC | 1.1 | °C/W | |||
| Maximum Junction-to-Ambient | RJA | 40 | °C/W | |||
| Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CES | VGE=0V,ICE=250uA | 1200 | V | ||
| Zero Gate Voltage Collector Current | ICES | VGE=0V,VCE=1200V | 1.0 | mA | ||
| Gate-Emitter leakage current | IGES | VGE=±20V | ±250 | nA | ||
| Gate-Emitter leakage current | IGES | VGE=±30V | ±500 | nA | ||
| Gate-Emitter Threshold Voltage | VGE(th) | IC=250uA ,VCE=VGE | 4.5 | 7.5 | V | |
| Diode Forward Voltage | VF | IF=75A,TJ=25°C | 2.1 | V | ||
| Diode Forward Voltage | VF | IF=75A,TJ=125°C | 1.8 | V | ||
| Diode Forward Voltage | VF | IF=75A,TJ=150°C | 1.7 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=75A,VGE=15V, TJ=25°C | 1.65 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=75A,VGE=15V, TJ=125°C | 2.1 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=75A,VGE=15V, TJ=150°C | 2.2 | V | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Cies | VCE=30V,VGE=0V f=1MHz | 7239 | pF | ||
| Output Capacitance | Coes | 269 | pF | |||
| Reverse Transfer Capacitance | Cres | 60.0 | pF | |||
| Gate Resistance | Rg | VGE=0V, VCC=0V, f=1MHz | 0.88 | Ω | ||
| Total Gate Charge | QG | VCE=960V, IC=75 A, VGE=15V | 348 | nC | ||
| Gate to Emitter Charge | QGE | 85.1 | nC | |||
| Gate to Collector Charge | QGC | 194 | nC | |||
| Switching Parameters | ||||||
| Turn-On Delay Time | td(on) | VCE=600V, IC=75A, Rg=10Ω, VGE=15V, Inductive Load TJ=25°C | 64 | ns | ||
| Current Rise Time | tr | 80 | ns | |||
| Turn-Off Delay Time | td(off) | 245 | ns | |||
| Current Fall Time | tf | 63 | ns | |||
| Turn-On Switching Energy | Eon(3) | Including the reverse recovery of the diode. | 6.0 | mJ | ||
| Turn-Off Switching Energy | Eoff | 2.6 | mJ | |||
| Total Switching Energy | Ets | 8.6 | mJ | |||
2308251150_JSCJ-CGR75N120F2KAD_C7543668.pdf
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