Durable JSCJ CR812B 2.5-6MA SCR designed for high surge peak on state current applications up to 140A
Key Attributes
Model Number:
CR812B 2.5-6MA
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
25mA
Voltage - On State(Vtm):
1.6V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
140A
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
CR812B 2.5-6MA
Package:
TO-220
Product Description
Product Overview
The CR812B is a standard SCR (Silicon Controlled Rectifier) from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a PNPN 4-layer structure, mesa glass passivated technology, and multi-layers metal electrodes. This SCR is designed for applications such as LED controllers, motorcycle voltage regulators, and hair straighteners.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CR812B
- Package Type: TO-220BK
- Marking: CR812B (Part Number), XXX (Internal Code)
Technical Specifications
| Symbol | Parameter | Test Condition | Value | Unit |
| VDRM/VRRM | Repetitive peak off-state voltage | Tj=25 | 800 | V |
| Tj=125 | 800 | V | ||
| IT(RMS) | RMS on-state current | TO-220BK(TC110) | 12 | A |
| IT(AV) | Average on-state current | TO-220BK(TC110) | 8 | A |
| ITSM | Non repetitive surge peak on-state current | Full sine wave, Tj(init)=25, tp=20ms; Fig. 3,5 | 140 | A |
| I2t | I2t value | tp=10ms | 98 | A2s |
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT, tr10ns, F=120HZ, Tj=125 | 50 | A/s |
| IGM | Peak gate current | tp=20s, Tj=125 | 4 | A |
| PG(AV) | Average gate power | Tj=125 | 1 | W |
| VTM | On-state Voltage | ITM=24A, Fig. 4 | 1.6 | V |
| IGT | Gate trigger current | VD=12V, RL=33, Tj=25, Fig. 6 | 0.2 | mA |
| VGT | Gate trigger voltage | IG=1.2IGT, Tj=25 | 1.0 | V |
| VGD | Non-triggering gate voltage | VD=VDRM, RL=3.3k, Tj=125 | 0.2 | V |
| IH | Holding current | IT=500mA, Tj=25 | 8 | mA |
| IL | Latching current | VD=12V, RL=33, Tj=25 | 10 | mA |
| dVD/dt | Critical rate of rise of off-state | VD=67%VDRM, Gate OPEN,Tj=125 | 30 | V/s |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=25 | 1 | mA |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=125 | 5 | mA |
| TSTG | Storage temperature | -40~+150 | ||
| Tj | Operating junction temperature | TO-220BK | -40~+125 | |
| Rth(j-c) | Junction to case (AC) | 1.3 | /W | |
| Rth(j-a) | Junction to ambient | 60 | /W |
2410121538_JSCJ-CR812B-2-5-6MA_C527754.pdf
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