Medium power amplification switching transistor JSMSEMI MMBT5551 NPN epitaxial planar die technology
Key Attributes
Model Number:
MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
-
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description
Product Overview
The MMBT5551 is an NPN general-purpose transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary PNP type (MMBT5401) is available, and a lead-free version is also offered.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: SOT-23
- Certifications: Lead-free version available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Max. | Unit |
| V(BR)CBO | Collector-base breakdown voltage | IC=100A,IE=0 | 180 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=0.1mA,IB=0 | 160 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A,IC=0 | 6 | V | |
| ICBO | Collector cut-off current | IE = 0; VCB = 120V | -50 | nA | |
| IEBO | Emitter cut-off current | IC = 0; VEB = 4V | -50 | nA | |
| hFE | DC current gain | VCE = 5V; IC= 1mA | 80 | 300 | |
| VCE = 5V;IC = 10mA | 100 | ||||
| VCE = 5V;IC = 50mA | - | ||||
| VCE(sat) | Collector-emitter saturation voltage | IC = 10mA; IB=1mA | 0.15 | V | |
| IC = 50mA; IB = 5mA | 0.2 | V | |||
| VBE(sat) | Base-emitter saturation voltage | IC=10mA; IB=1mA | 1 | V | |
| IC=50mA; IB=5mA | 1 | V | |||
| fT | Transition frequency | IC=10mA; VCB=10V; f=100MHz | 100 | 300 | MHz |
| Cobo | Output capacitance | IE=10mA; VCE =10V; f=1.0MHz | 6.0 | pF |
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-base voltage | 180 | V |
| VCEO | Collector-emitter voltage | 160 | V |
| VEBO | Emitter-base voltage | 6 | V |
| IC | Collector current (DC) | 0.6 | A |
| PC | Collector dissipation | 0.35 | W |
| RJA | Thermal resistance, Junction to ambient | 357 | C/W |
| Tj ,Tstg | Junction and storage temperature | -55 to +150 | C |
2306301522_JSMSEMI-MMBT5551_C916370.pdf
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