Silicon NPN Power Transistor JSMSEMI 2SC2073 TO220 Package Suitable for Power Amplifier Applications
Key Attributes
Model Number:
2SC2073
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
25W
Transition Frequency(fT):
4MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
2SC2073
Package:
TO-220
Product Description
Product Overview
The 2SC2073 is a Silicon NPN transistor in a TO-220 Plastic Package. It features a wide Safe Operating Area and is complementary to the 2SA940. This transistor is designed for power amplifier and vertical output applications.
Product Attributes
- Type: NPN Silicon Power Transistor
- Package: TO-220 Plastic Package
- Complementary to: 2SA940
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions | Min | Typ | Max |
| Collector to Base Voltage | VCBO | 150 | V | ||||
| Collector to Emitter Voltage | VCEO | 150 | V | ||||
| Emitter to Base Voltage | VEBO | 5.0 | V | ||||
| Collector Current - Continuous | IC | 1.5 | A | ||||
| Base Current - Continuous | IB | 0.5 | A | ||||
| Collector Power Dissipation | PC | 2.0 | W | ||||
| Collector Power Dissipation (Tc=25) | PC | 25 | W | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature Range | Tstg | -55150 | |||||
| Collector Cut-Off Current | ICBO | A | VCB=120V, IE=0 | 10 | |||
| Emitter Cut-Off Current | IEBO | A | VEB=5.0V, IC=0 | 10 | |||
| DC Current Gain | hFE | VCE=10V, IC=500mA | 40 | 75 | 140 | ||
| Collector to Emitter Saturation Voltage | VCE(sat) | V | IC=500mA, IB=50mA | 1.5 | |||
| Base to Emitter Voltage | VBE | V | VCE=10V, IC=500mA | 0.65 | 0.75 | 0.85 | |
| Transition Frequency | fT | MHz | VCE=10V, IC=500mA | 4.0 | |||
| Collector output capacitance | Cob | pF | VCB=10V, IE=0, f=1.0MHz | 35 |
2401051654_JSMSEMI-2SC2073_C2900596.pdf
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