Plastic Encapsulated Zener Diode JSCJ AD-BZT52B15S Series Medium Current Planar Die Construction
Key Attributes
Model Number:
AD-BZT52B15S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
30Ω
Zener Voltage(Range):
14.7V~15.3V
Pd - Power Dissipation:
200mW
Impedance(Zzk):
200Ω
Mfr. Part #:
AD-BZT52B15S
Package:
SOD-323
Product Description
Product Overview
The AD-BZT52B*S series is a range of plastic-encapsulated Zener diodes designed for general purpose, medium current applications. These diodes feature a planar die construction and are AEC-Q101 qualified, ensuring reliability for automotive and industrial use.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. (JSCJ)
- Origin: China
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type Number | Marking | Zener Voltage (V) Min | Zener Voltage (V) Norm | Zener Voltage (V) Max | Test Current (mA) | Max Zener Impedance @ IZT () | Max Reverse Current (A) @ VR (V) | Temperature Coefficient of Zener Voltage (mV/C) @ IZT = 5mA |
| AD-BZT52B2V4S | 2WX | 2.35 | 2.4 | 2.45 | 5 | 600 | 50 @ 1.0 | -3.5 |
| AD-BZT52B2V7S | 2W1 | 2.65 | 2.7 | 2.75 | 5 | 600 | 20 @ 1.0 | -3.5 |
| AD-BZT52B3V0S | 2W2 | 2.94 | 3.0 | 3.06 | 5 | 600 | 10 @ 1.0 | -3.5 |
| AD-BZT52B3V3S | 2W3 | 3.23 | 3.3 | 3.37 | 5 | 600 | 5 @ 1.0 | -3.5 |
| AD-BZT52B3V6S | 2W4 | 3.53 | 3.6 | 3.67 | 5 | 600 | 5 @ 1.0 | -3.5 |
| AD-BZT52B3V9S | 2W5 | 3.82 | 3.9 | 3.98 | 5 | 600 | 3 @ 1.0 | -3.5 |
| AD-BZT52B4V3S | 2W6 | 4.21 | 4.3 | 4.39 | 5 | 600 | 3 @ 1.0 | -3.5 |
| AD-BZT52B4V7S | 2W7 | 4.61 | 4.7 | 4.79 | 5 | 500 | 3 @ 2.0 | -3.5 |
| AD-BZT52B5V1S | 2W8 | 5.00 | 5.1 | 5.20 | 5 | 480 | 2 @ 2.0 | -2.7 |
| AD-BZT52B5V6S | 2W9 | 5.49 | 5.6 | 5.71 | 5 | 400 | 1 @ 2.0 | -2.0 |
| AD-BZT52B6V2S | 2WA | 6.08 | 6.2 | 6.32 | 5 | 150 | 3 @ 4.0 | 0.4 |
| AD-BZT52B6V8S | 2WB | 6.66 | 6.8 | 6.94 | 5 | 80 | 2 @ 4.0 | 1.2 |
| AD-BZT52B7V5S | 2WC | 7.35 | 7.5 | 7.65 | 5 | 80 | 1 @ 5.0 | 2.5 |
| AD-BZT52B8V2S | 2WD | 8.04 | 8.2 | 8.36 | 5 | 80 | 0.7 @ 5.0 | 3.2 |
| AD-BZT52B9V1S | 2WE | 8.92 | 9.1 | 9.28 | 5 | 100 | 0.5 @ 6.0 | 3.8 |
| AD-BZT52B10S | 2WF | 9.80 | 10 | 10.20 | 5 | 150 | 0.2 @ 7.0 | 4.5 |
| AD-BZT52B11S | 2WG | 10.78 | 11 | 11.22 | 5 | 150 | 0.1 @ 8.0 | 5.4 |
| AD-BZT52B12S | 2WH | 11.76 | 12 | 12.24 | 5 | 150 | 0.1 @ 8.0 | 6.0 |
| AD-BZT52B13S | 2WI | 12.73 | 13 | 13.26 | 5 | 170 | 0.1 @ 8.0 | 7.0 |
| AD-BZT52B15S | 2WJ | 14.70 | 15 | 15.30 | 5 | 200 | 0.1 @ 10.5 | 9.2 |
| AD-BZT52B16S | 2WK | 15.68 | 16 | 16.32 | 5 | 200 | 0.1 @ 11.2 | 10.4 |
| AD-BZT52B18S | 2WL | 17.64 | 18 | 18.36 | 5 | 225 | 0.1 @ 12.6 | 12.4 |
| AD-BZT52B20S | 2WM | 19.60 | 20 | 20.40 | 5 | 225 | 0.1 @ 14.0 | 14.4 |
| AD-BZT52B22S | 2WN | 21.56 | 22 | 22.44 | 5 | 250 | 0.1 @ 15.4 | 16.4 |
| AD-BZT52B24S | 2WO | 23.52 | 24 | 24.48 | 5 | 250 | 0.1 @ 16.8 | 18.4 |
| AD-BZT52B27S | 2WP | 26.46 | 27 | 27.54 | 2 | 300 | 0.1 @ 18.9 | 21.4 |
| AD-BZT52B30S | 2WQ | 29.40 | 30 | 30.60 | 2 | 300 | 0.1 @ 21.0 | 24.4 |
| AD-BZT52B33S | 2WR | 32.34 | 33 | 33.66 | 2 | 325 | 0.1 @ 23.1 | 27.4 |
| AD-BZT52B36S | 2WS | 35.28 | 36 | 36.72 | 2 | 350 | 0.1 @ 25.2 | 30.4 |
| AD-BZT52B39S | 2WT | 38.22 | 39 | 39.78 | 2 | 350 | 0.1 @ 27.3 | 33.4 |
| Parameter | Symbol | Value | Unit |
| Forward voltage @ IF = 10mA | VF | 0.9 | V |
| Power dissipation | PD | 200 | mW |
| Thermal resistance from junction to ambient | RJA | 625 | C/W |
| Operating junction and storage temperature range | Tj, Tstg | -55 ~ 150 | C |
Notes:
1) Short duration test pulse used to minimize self-heating effect.
2) Measured with the device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad area of 25mm2.
3) f = 1kHZ.
2410121523_JSCJ-AD-BZT52B15S_C2975596.pdf
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