Zener Diode JSMSEMI BZX584C30 Silicon Planar Type with 200 Milliwatt Power Rating and SOD523 Package
Key Attributes
Model Number:
BZX584C30
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
28V~32V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
30V
Impedance(Zzk):
300Ω
Mfr. Part #:
BZX584C30
Package:
SOD-523
Product Description
Product Overview
The JSMICRO Semiconductor BZX584C2V0~BZX584C75 series are silicon planar Zener diodes designed for general-purpose applications. They offer a standard Zener breakdown voltage range from 2.0 V to 75 V and a steady-state power rating of 200 mW. These diodes are housed in a compact SOD-523 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Planar
- Package: SOD-523
Technical Specifications
| Type | Marking Code | Zener Voltage (V) at IZT (mA) Min. | Zener Voltage (V) at IZT (mA) Nom. | Zener Voltage (V) at IZT (mA) Max. | Zener Impedance () at IZK (A) | Leakage Current (A) at VR (V) | Forward Voltage (V) at IF = 10 mA |
| BZX584C2V0 | RD | 1.8 | 2.0 | 2.15 | 100 @ 0.5 mA | 120 @ 1.8 V | 0.9 |
| BZX584C2V2 | RE | 2.08 | 2.2 | 2.33 | 100 @ 0.7 mA | 120 @ 2.08 V | 0.9 |
| BZX584C2V4 | Z7/00 | 2.2 | 2.4 | 2.6 | 1000 @ 1 mA | 120 @ 2.2 V | 0.9 |
| BZX584C2V7 | A8/01 | 2.5 | 2.7 | 2.9 | 1000 @ 1 mA | 120 @ 2.5 V | 0.9 |
| BZX584C3V0 | B8/02 | 2.8 | 3.0 | 3.2 | 1000 @ 1 mA | 50 @ 2.8 V | 0.9 |
| BZX584C3V3 | C8/05 | 3.1 | 3.3 | 3.5 | 1000 @ 1 mA | 20 @ 3.1 V | 0.9 |
| BZX584C3V6 | D8/06 | 3.4 | 3.6 | 3.8 | 1000 @ 1 mA | 10 @ 3.4 V | 0.9 |
| BZX584C3V9 | E8 | 3.7 | 3.9 | 4.1 | 1000 @ 1 mA | 5 @ 3.7 V | 0.9 |
| BZX584C4V3 | F8/08 | 4 | 4.3 | 4.6 | 1000 @ 1 mA | 5 @ 4.0 V | 0.9 |
| BZX584C4V7 | G8/09 | 4.4 | 4.7 | 5 | 800 @ 1 mA | 2 @ 4.4 V | 0.9 |
| BZX584C5V1 | H8/0A | 4.8 | 5.1 | 5.4 | 500 @ 1 mA | 2 @ 4.8 V | 0.9 |
| BZX584C5V6 | I8/0C | 5.2 | 5.6 | 6 | 200 @ 1 mA | 1 @ 5.2 V | 0.9 |
| BZX584C6V2 | J8/0E | 5.8 | 6.2 | 6.6 | 100 @ 1 mA | 1 @ 5.8 V | 0.9 |
| BZX584C6V8 | K8/0F | 6.4 | 6.8 | 7.2 | 160 @ 0.5 mA | 0.5 @ 6.4 V | 0.9 |
| BZX584C7V5 | L8/0G | 7 | 7.5 | 7.9 | 160 @ 0.5 mA | 0.5 @ 7.0 V | 0.9 |
| BZX584C8V2 | M8/0H | 7.7 | 8.2 | 8.7 | 160 @ 0.5 mA | 0.5 @ 7.7 V | 0.9 |
| BZX584C9V1 | N8/0K | 8.5 | 9.1 | 9.6 | 160 @ 0.5 mA | 0.5 @ 8.5 V | 0.9 |
| BZX584C10 | O8/0L | 9.4 | 10 | 10.6 | 160 @ 0.1 mA | 0.1 @ 9.4 V | 0.9 |
| BZX584C11 | P8/0M | 10.4 | 11 | 11.6 | 160 @ 0.1 mA | 0.1 @ 10.4 V | 0.9 |
| BZX584C12 | Q8/0N | 11.4 | 12 | 12.7 | 80 @ 0.1 mA | 0.1 @ 11.4 V | 0.9 |
| BZX584C13 | R8/0P | 12.4 | 13.25 | 14.1 | 80 @ 0.1 mA | 0.1 @ 12.4 V | 0.9 |
| BZX584C15 | S8/0T | 14.3 | 15 | 15.8 | 80 @ 0.1 mA | 0.1 @ 14.3 V | 0.9 |
| BZX584C16 | T8/0U | 15.3 | 16.2 | 17.1 | 80 @ 0.1 mA | 0.1 @ 15.3 V | 0.9 |
| BZX584C18 | U8/0W | 16.8 | 18 | 19.1 | 80 @ 0.1 mA | 0.1 @ 16.8 V | 0.9 |
| BZX584C20 | V8/0Z | 18.8 | 20 | 21.2 | 100 @ 0.1 mA | 0.1 @ 18.8 V | 0.9 |
| BZX584C22 | W8/10 | 20.8 | 22 | 23.3 | 100 @ 0.1 mA | 0.1 @ 20.8 V | 0.9 |
| BZX584C24 | X8/11 | 22.8 | 24.2 | 25.6 | 120 @ 0.1 mA | 0.1 @ 22.8 V | 0.9 |
| BZX584C27 | Y8/12 | 25.1 | 27 | 28.9 | 300 @ 0.1 mA | 0.1 @ 25.1 V | 0.9 |
| BZX584C30 | Z8/14 | 28 | 30 | 32 | 300 @ 0.1 mA | 0.1 @ 28 V | 0.9 |
| BZX584C33 | A9/18 | 31 | 33 | 35 | 300 @ 0.1 mA | 0.1 @ 31 V | 0.9 |
| BZX584C36 | B9/19 | 34 | 36 | 38 | 500 @ 0.1 mA | 0.1 @ 34 V | 0.9 |
| BZX584C39 | C9/20 | 37 | 39 | 41 | 500 @ 2 mA | 2 @ 37 V | 0.9 |
| BZX584C43 | D9/Y15/21 | 40 | 43 | 46 | 500 @ 1 mA | 2 @ 40 V | 0.9 |
| BZX584C47 | E9/1A | 44 | 47 | 50 | 500 @ 1 mA | 2 @ 44 V | 0.9 |
| BZX584C51 | F9/1C | 48 | 51 | 54 | 500 @ 1 mA | 1 @ 48 V | 0.9 |
| BZX584C56 | G9/1D | 52 | 56 | 60 | 500 @ 1 mA | 1 @ 52 V | 0.9 |
| BZX584C62 | H9/1E | 58 | 62 | 66 | 500 @ 0.2 mA | 0.2 @ 58 V | 0.9 |
| BZX584C68 | I9/1F | 64 | 68 | 72 | 500 @ 0.2 mA | 0.2 @ 64 V | 0.9 |
| BZX584C75 | J9/1G | 70 | 75 | 79 | 500 @ 0.2 mA | 0.2 @ 70 V | 0.9 |
Note: 1) Tested with pulses tp = 20 ms.
2409302232_JSMSEMI-BZX584C30_C2857142.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
