P Channel Power MOSFET JSCJ CJAC100P03 Designed for Uninterruptible Power Supplies and SMPS Circuits
Key Attributes
Model Number:
CJAC100P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
750pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
12nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
210nC@10V
Mfr. Part #:
CJAC100P03
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC100P03 is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(ON)) with low gate charge. This MOSFET is suitable for a wide range of applications including battery switches, load switches, SMPS, general-purpose applications, hard switched and high-frequency circuits, and Uninterruptible Power Supplies. Key features include high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC100P03
- Technology: P-Channel Power MOSFET, Trench Technology
- Package: PDFNWB5x6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25 | -100 | A | ||
| Pulsed Drain Current | IDM | -400 | A | |||
| Single Pulsed Avalanche Energy | EAS | 100 | mJ | |||
| Thermal Resistance Junction to Ambient | RθJA | 62.5 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V, ID=-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS=-24V, VGS =0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VDS=0V, VGS =±20V | ±100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS=VGS, ID =-250µA | -1.2 | -1.6 | -2.2 | V |
| Static drain-source on-state resistance | RDS(on) | VGS=-10V, ID =-30A | 2.3 | mΩ | ||
| Static drain-source on-state resistance | RDS(on) | VGS=-4.5V, ID =-20A | 3.4 | mΩ | ||
| Forward transconductance | gFS | VDS=-10V, ID=-3A | 20 | S | ||
| Input capacitance | Ciss | VDS =-25V,VGS =0V, f =1MHz | 7930 | pF | ||
| Output capacitance | Coss | VDS =-25V,VGS =0V, f =1MHz | 12000 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-25V,VGS =0V, f =1MHz | 1300 | pF | ||
| Total gate charge | Qg | VGS=-10V, VDS=-24V, ID=-10A | 146 | nC | ||
| Gate-source charge | Qgs | VGS=-10V, VDS=-24V, ID=-10A | 22 | nC | ||
| Gate-drain charge | Qg | VGS=-10V, VDS=-24V, ID=-10A | 32 | nC | ||
| Turn-on delay time | td(on) | VDS=-15V,RL=5Ω, VGS=-10V,RG=5Ω | 17 | ns | ||
| Turn-on rise time | tr | VDS=-15V,RL=5Ω, VGS=-10V,RG=5Ω | 61 | ns | ||
| Turn-off delay time | td(off) | VDS=-15V,RL=5Ω, VGS=-10V,RG=5Ω | 200 | ns | ||
| Turn-off fall time | tf | VDS=-15V,RL=5Ω, VGS=-10V,RG=5Ω | 113 | ns | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-10A | -1.0 | V | ||
| Continuous drain-source diode forward current | IS | -100 | A | |||
| Pulsed drain-source diode forward current | ISM | -400 | A |
2410121806_JSCJ-CJAC100P03_C504076.pdf
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