Power Field Effect Transistor JSCJ CJAC200SN04U Featuring SGT Technology and Low On State Resistance
Key Attributes
Model Number:
CJAC200SN04U
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
200A
RDS(on):
1.05mΩ@4.5V,30A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
89pF
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
9.107nF@20V
Pd - Power Dissipation:
104W
Gate Charge(Qg):
124nC@10V
Mfr. Part #:
CJAC200SN04U
Package:
PDFNWB5x6-8L
Product Description
Product Description
The CJAC200SN04U is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology is engineered to minimize on-state resistance, provide superior switching performance, and offer robust protection against high energy pulses in avalanche and commutation modes. These characteristics make the device ideal for high-efficiency, fast-switching applications.
Product Attributes
- Part Number: CJAC200SN04U
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Technology: SGT (Silicon Germanium Technology)
- Package: PDFNWB5x6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =10mA | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 1.0 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.3 | 1.9 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =50A | 0.67 | m | ||
| VGS =6V, ID =50A | 0.82 | m | ||||
| VGS =4.5V, ID =30A | 1.05 | m | ||||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =20V,VGS =0V, f =100kHz | 9107 | pF | ||
| Output capacitance | Coss | 2083 | ||||
| Reverse transfer capacitance | Crss | 89 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=50A | 114 | nC | ||
| 110 | ||||||
| 950 | ||||||
| Switching Time | VDS=20V, VGS=10V, RL=2 , Rg=10 | 320 | ns | |||
| - | ||||||
| - | ||||||
| - | ||||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=50A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 200 | A | |||
| Pulsed drain-source diode forward current | ISM | 600 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 200 | A | |||
| Pulsed Drain Current | IDM | 600 | A | |||
| Single Pulsed Avalanche Energy | EAS | 760 | mJ | |||
| Power Dissipation | PD | W | ||||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance Junction to Case | RJC | 1.2 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
2410121706_JSCJ-CJAC200SN04U_C19268993.pdf
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