Load Switching N Channel MOSFET JSCJ CJ2304 SOT 23 Package Ideal for Portable and DC DC Applications
Key Attributes
Model Number:
CJ2304
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Input Capacitance(Ciss):
235pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
3.2nC@10V
Mfr. Part #:
CJ2304
Package:
SOT-23
Product Description
Product Overview
The CJ2304 is a N-Channel MOSFET in a SOT-23 package, designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology for enhanced performance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJ2304
- Package: SOT-23
- Material: Plastic-Encapsulated
- Origin: China (implied by manufacturer name)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | 3.3 | A | ||
| Pulsed Drain Current | IDM | 15 | A | |||
| Continuous Source-Drain Diode Current | IS | 0.9 | A | |||
| Maximum Power Dissipation | PD | (Ta=25) | 0.35 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (t≤5s) | 357 | °C/W | ||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Junction Temperature | TJ | 150 | °C | |||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1 | 2.2 | V | |
| Gate-body leakage | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS =10V, ID =3.2A | 0.049 | 0.060 | Ω | |
| VGS =4.5V, ID =2.8A | 0.061 | 0.075 | ||||
| Forward transconductance | gfs | VDS =4.5V, ID =2.5A | 2.5 | S | ||
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDS =15V,VGS =10V,ID =3.4A | 4.5 | 6.7 | nC | |
| VDS =15V,VGS =4.5V,ID =3.4A | 2.1 | 3.2 | ||||
| Gate-source charge | Qgs | 0.85 | nC | |||
| Gate-drain charge | Qgd | 0.65 | nC | |||
| Gate resistance | Rg | f =1.0MHz | 0.8 | Ω | ||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 235 | pF | ||
| Output capacitance | Coss | 45 | ||||
| Reverse transfer capacitance | Crss | 17 | ||||
| Switching Characteristics | ||||||
| VDD=15V, RL=5.6Ω, ID ≈2.7A, VGEN=4.5V,Rg=1Ω | Turn-on delay Time | td(on) | 12 | 20 | ns | |
| Rise time | tr | 50 | 75 | |||
| Turn-off delay time | td(off) | 12 | 20 | |||
| Fall time | tf | 22 | 35 | |||
| VDD=15V, RL=5.6Ω, ID ≈2.7A, VGEN=10V,Rg=1Ω | Turn-on delay time | td(on) | 5 | 10 | ns | |
| Rise time | tr | 12 | 20 | |||
| Turn-off delay time | td(off) | 10 | 15 | |||
| Fall time | tf | 5 | 10 | |||
| Drain-source body diode characteristics | ||||||
| Continuous source-drain diode current | IS | TC=25°C | 1.4 | A | ||
| Pulse diode forward current | ISM | 15 | A | |||
| Body diode voltage | VSD | IS=-2.7A,VGS=0V | 0.8 | 1.2 | V | |
2410121537_JSCJ-CJ2304_C44209.pdf
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