Low RDSon Dual N Channel MOSFET JSCJ CJ3134KDW Suitable for Power Switching and Interface Circuits
Key Attributes
Model Number:
CJ3134KDW
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
800mΩ@1.8V,0.45A
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
2 N-Channel
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
750pC@4.5V
Mfr. Part #:
CJ3134KDW
Package:
SOT-363
Product Description
Product Overview
The CJ3134KDW is a dual N-Channel MOSFET designed for surface mounting. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, battery management in portable electronics, and logic level shifting. This lead-free product is equivalent to two CJ3134K devices.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Type: Dual N-Channel MOSFET
- Package: SOT-363
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 20 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.35 | 0.54 | 1.1 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.65A | 270 | 380 | m | |
| VGS =2.5V, ID =0.55A | 320 | 450 | m | |||
| VGS =1.8V, ID =0.45A | 390 | 800 | m | |||
| Forward tranconductance | gFS | VDS =10V, ID =0.8A | 1.6 | S | ||
| Diode forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 79 | 120 | pF | |
| Output Capacitance | Coss | 13 | 20 | pF | ||
| Reverse Transfer Capacitance | Crss | 9 | 15 | pF | ||
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10 | 6.7 | ns | ||
| Turn-on rise time | tr | 4.8 | ns | |||
| Turn-off delay time | td(off) | 17.3 | ns | |||
| Turn-off fall time | tf | 7.4 | ns | |||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID =0.25A | 750 | pC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID =0.25A | 75 | pC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V,ID =0.25A | 225 | pC |
2410121537_JSCJ-CJ3134KDW_C504140.pdf
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