Plastic Encapsulated Zener Diode JSCJ AD BZT52B16S Series Medium Current AEC Q101 Qualified Component
Key Attributes
Model Number:
AD-BZT52B16S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
40Ω
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
15.68V~16.32V
Impedance(Zzk):
200Ω
Mfr. Part #:
AD-BZT52B16S
Package:
SOD-323
Product Description
AD-BZT52B*S Series Plastic-Encapsulated Diode
The AD-BZT52B*S series is a line of plastic-encapsulated Zener diodes featuring a planar die construction. Designed for general purpose, medium current applications, these diodes are AEC-Q101 qualified.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. (JSCJ)
- Origin: China
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type Number | Marking | Zener Voltage (V) | IZT (mA) | ZZT @ IZT () | IR (A) | VR (V) | TC (mV/C) |
| AD-BZT52B2V4S | 2WX | 2.35 - 2.45 | 5 | 100 | 50 | 1.0 | -3.5 |
| AD-BZT52B2V7S | 2W1 | 2.65 - 2.75 | 5 | 100 | 20 | 1.0 | -3.5 |
| AD-BZT52B3V0S | 2W2 | 2.94 - 3.06 | 5 | 95 | 10 | 1.0 | -3.5 |
| AD-BZT52B3V3S | 2W3 | 3.23 - 3.37 | 5 | 95 | 5 | 1.0 | -3.5 |
| AD-BZT52B3V6S | 2W4 | 3.53 - 3.67 | 5 | 90 | 5 | 1.0 | -3.5 |
| AD-BZT52B3V9S | 2W5 | 3.82 - 3.98 | 5 | 90 | 3 | 1.0 | -3.5 |
| AD-BZT52B4V3S | 2W6 | 4.21 - 4.39 | 5 | 90 | 3 | 1.0 | -3.5 |
| AD-BZT52B4V7S | 2W7 | 4.61 - 4.79 | 5 | 80 | 3 | 2.0 | -3.5 |
| AD-BZT52B5V1S | 2W8 | 5.00 - 5.20 | 5 | 60 | 2 | 2.0 | -2.7 |
| AD-BZT52B5V6S | 2W9 | 5.49 - 5.71 | 5 | 40 | 1 | 2.0 | -2.0 |
| AD-BZT52B6V2S | 2WA | 6.08 - 6.32 | 5 | 10 | 3 | 4.0 | 0.4 |
| AD-BZT52B6V8S | 2WB | 6.66 - 6.94 | 5 | 15 | 2 | 4.0 | 1.2 |
| AD-BZT52B7V5S | 2WC | 7.35 - 7.65 | 5 | 15 | 1 | 5.0 | 2.5 |
| AD-BZT52B8V2S | 2WD | 8.04 - 8.36 | 5 | 15 | 0.7 | 5.0 | 3.2 |
| AD-BZT52B9V1S | 2WE | 8.92 - 9.28 | 5 | 15 | 0.5 | 6.0 | 3.8 |
| AD-BZT52B10S | 2WF | 9.80 - 10.20 | 5 | 20 | 0.2 | 7.0 | 4.5 |
| AD-BZT52B11S | 2WG | 10.78 - 11.22 | 5 | 20 | 0.1 | 8.0 | 5.4 |
| AD-BZT52B12S | 2WH | 11.76 - 12.24 | 5 | 25 | 0.1 | 8.0 | 6.0 |
| AD-BZT52B13S | 2WI | 12.73 - 13.26 | 5 | 30 | 0.1 | 8.0 | 7.0 |
| AD-BZT52B15S | 2WJ | 14.70 - 15.30 | 5 | 30 | 0.1 | 10.5 | 9.2 |
| AD-BZT52B16S | 2WK | 15.68 - 16.32 | 5 | 40 | 0.1 | 11.2 | 10.4 |
| AD-BZT52B18S | 2WL | 17.64 - 18.36 | 5 | 45 | 0.1 | 12.6 | 12.4 |
| AD-BZT52B20S | 2WM | 19.60 - 20.40 | 5 | 55 | 0.1 | 14.0 | 14.4 |
| AD-BZT52B22S | 2WN | 21.56 - 22.44 | 5 | 55 | 0.1 | 15.4 | 16.4 |
| AD-BZT52B24S | 2WO | 23.52 - 24.48 | 5 | 70 | 0.1 | 16.8 | 18.4 |
| AD-BZT52B27S | 2WP | 26.46 - 27.54 | 2 | 80 | 0.1 | 18.9 | 21.4 |
| AD-BZT52B30S | 2WQ | 29.40 - 30.60 | 2 | 80 | 0.1 | 21.0 | 24.4 |
| AD-BZT52B33S | 2WR | 32.34 - 33.66 | 2 | 80 | 0.1 | 23.1 | 27.4 |
| AD-BZT52B36S | 2WS | 35.28 - 36.72 | 2 | 90 | 0.1 | 25.2 | 30.4 |
| AD-BZT52B39S | 2WT | 38.22 - 39.78 | 2 | 130 | 0.1 | 27.3 | 33.4 |
Notes:
1) Short duration test pulse used to minimize self-heating effect.
2) Measured with the device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad area of 25mm2.
3) f = 1kHZ.
2410121523_JSCJ-AD-BZT52B16S_C2975605.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
