P Channel Power MOSFET JSCJ CJ3139KW with Plastic Encapsulate Package and Low Gate Threshold Voltage
Key Attributes
Model Number:
CJ3139KW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
520mΩ@4.5V,0.66A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
15pF@16V
Number:
1 P-Channel
Input Capacitance(Ciss):
170pF@16V
Pd - Power Dissipation:
200mW
Mfr. Part #:
CJ3139KW
Package:
SOT-323
Product Description
Product Overview
The CJ3139KW is a P-Channel Power MOSFET designed using an advanced Power Trench process to optimize RDS(ON). It features high-side switching, low on-resistance, low threshold voltage, and fast switching speed, making it suitable for various driver applications, battery-operated systems, power supply converter circuits, and load/power switching in portable devices.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate MOSFETS
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.35 | -0.45 | -1.1 | V |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =10V | 20 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-1A | 430 | 520 | m | |
| VGS =-2.5V, ID =-800mA | 624 | 700 | m | |||
| VGS =-1.8V, ID =-500mA | 950 | m | ||||
| Forward Transconductance | gFS | VDS =-10V, ID =-540mA | 0.8 | S | ||
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 170 | pF | ||
| Output Capacitance | Coss | 25 | pF | |||
| Reverse Transfer Capacitance | Crss | 15 | pF | |||
| Switching Times | td(on) | VDD=-10V, ID=-200mA, VGS=-4.5V,RG=10 | 9 | ns | ||
| tr | 5.8 | ns | ||||
| td(off) | 32.7 | ns | ||||
| tf | 20.3 | ns | ||||
| Drain-Source Diode Forward Voltage | VSD | IS=-0.5A, VGS = 0V | -1.2 | V |
2409300703_JSCJ-CJ3139KW_C504054.pdf
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