Dual channel MOSFET JSCJ CJ3439KDW with low logic level gate drive and surface mount SOT 363 package
Key Attributes
Model Number:
CJ3439KDW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA;660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
350mV
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF@20V
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
13pF;15pF
Input Capacitance(Ciss):
120pF@20V
Pd - Power Dissipation:
-
Gate Charge(Qg):
-
Mfr. Part #:
CJ3439KDW
Package:
SOT-363
Product Description
Product Overview
The CJ3439KDW is a SOT-363 plastic-encapsulated MOSFET featuring a surface mount package, low RDS(on), and operation at low logic level gate drive. It includes both N-channel (CJ3134K) and P-channel (CJ3139K) MOSFETs independently within a single package. This device is ESD protected at the gate and is suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-363
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | N-MOSFET Test Condition | Min | Typ | Max | Unit | P-MOSFET Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | -20 | V | ||||||
| Gate-Source Voltage | VGS | 12 | V | 12 | V | ||||||
| Continuous Drain Current (note 1) | ID | Ta=25 | 0.75 | A | Ta=25 | -0.66 | A | ||||
| Pulsed Drain Current (tp=10us) | IDM | Ta=25 | 1.8 | A | Ta=25 | -1.2 | A | ||||
| Thermal Resistance Junction to Ambient (note 1) | RJA | 833 | /W | ||||||||
| Junction Temperature | TJ | 150 | |||||||||
| Storage Temperature | TSTG | -55 | +150 | ||||||||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 | ||||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | VGS = 0V, ID =-250A | -20 | V | ||||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | VDS =-20V,VGS = 0V | -1 | A | ||||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 20 | uA | VGS =10V, VDS = 0V | 20 | uA | ||||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =250A | 0.35 | 1.1 | V | VDS =VGS, ID =-250A | -0.35 | -1.1 | V | ||
| Drain-source on-resistance(note 2) | RDS(on) | VGS =4.5V, ID =0.65A | 380 | m | VGS =-4.5V, ID =-1A | 520 | m | ||||
| Drain-source on-resistance(note 2) | RDS(on) | VGS =2.5V, ID =0.55A | 450 | m | VGS =-2.5V, ID =-0.8A | 700 | m | ||||
| Drain-source on-resistance(note 2) | RDS(on) | VGS =1.8V, ID =0.45A | 800 | m | VGS =-1.8V, ID =-0.5A | 950 | m | ||||
| Forward tranconductance(note 2) | gFS | VDS =10V, ID =0.8A | 1.6 | S | VDS =-10V, ID =-0.54A | 1.2 | S | ||||
| Diode forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | IS=-0.5A, VGS = 0V | -1.2 | V | ||||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 79 | 120 | pF | VDS =-16V,VGS =0V,f =1MHz | 113 | 170 | pF | ||
| Output Capacitance | Coss | VDS =16V,VGS =0V,f =1MHz | 13 | 20 | pF | VDS =-16V,VGS =0V,f =1MHz | 15 | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =16V,VGS =0V,f =1MHz | 9 | 15 | pF | VDS =-16V,VGS =0V,f =1MHz | 9 | 15 | pF | ||
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, ID=500mA,RGEN=10 | 6.7 | ns | VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10 | 9 | ns | ||||
| Turn-on rise time | tr | VGS=4.5V,VDS=10V, ID=500mA,RGEN=10 | 4.8 | ns | VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10 | 5.8 | ns | ||||
| Turn-off delay time | td(off) | VGS=4.5V,VDS=10V, ID=500mA,RGEN=10 | 17.3 | ns | VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10 | 32.7 | ns | ||||
| Turn-off fall time | tf | VGS=4.5V,VDS=10V, ID=500mA,RGEN=10 | 7.4 | ns | VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10 | 20.3 | ns |
2410121610_JSCJ-CJ3439KDW_C99824.pdf
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