Dual P Channel Power MOSFET JSCJ CJ3139KDW Optimized RDS ON for Driver Circuits and Portable Devices
Key Attributes
Model Number:
CJ3139KDW
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-
RDS(on):
520mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.1V
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
2 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
170pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ3139KDW
Package:
SOT-363
Product Description
Product Overview
The CJ3139KDW is a Dual P-Channel Power MOSFET designed using an advanced Power Trench process to optimize RDS(ON). It integrates two independent P-channel MOSFETs within a single package, making it suitable for high-side switching applications. Key features include low on-resistance, low threshold voltage, and fast switching speeds, making it ideal for driver circuits, battery-operated systems, power supply converters, and load/power switching in portable devices.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer)
- Material: Plastic-Encapsulated MOSFETs
- Package Type: SOT-363
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.35 | -0.45 | -1.1 | V |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =10V | 20 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-1A | 430 | 520 | m | |
| VGS =-2.5V, ID =-800mA | 624 | 700 | m | |||
| VGS =-1.8V, ID =-500mA | 950 | m | ||||
| Forward Transconductance | gFS | VDS =-10V, ID =-540mA | 0.8 | S | ||
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 170 | pF | ||
| Output Capacitance | Coss | 25 | pF | |||
| Reverse Transfer Capacitance | Crss | 15 | pF | |||
| Turn-On Delay Time | td(on) | VDD=-10V, ID=-200mA, VGS=-4.5V,RG=10 | 9 | ns | ||
| Rise Time | tr | 5.8 | ns | |||
| Turn-Off Delay Time | td(off) | 32.7 | ns | |||
| Fall Time | tf | 20.3 | ns | |||
| Drain-Source Diode Forward Voltage | VSD | IS=-0.5A, VGS = 0V | -1.2 | V | ||
| Drain-Source voltage | VDSS | -20 | V | |||
| Gate-Source voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID(DC) | -0.66 | A | |||
| Drain Current -Pulsed | IDM(pulse) | (note1) | -2.64 | A | ||
| Power Dissipation | PD | (note 2) | 150 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Storage Temperature | Tj | 150 | ||||
| Junction Temperature | Tstg | -55 | ~+150 |
2410121537_JSCJ-CJ3139KDW_C504141.pdf
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