compact JSCJ CJK2333 P channel TrenchFET Power MOSFET ideal for DC DC converters and battery switches
Key Attributes
Model Number:
CJK2333
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
236pF@6V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.275nF@6V
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
CJK2333
Package:
SOT-23-3L
Product Description
Product Overview
The CJK2333 is a P-channel TrenchFET Power MOSFET designed for efficient power management in portable devices. It offers excellent RDS(on) and low gate charge, making it suitable for DC/DC converters, load switches, and battery switches. The SOT-23-3L package ensures a compact footprint.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23-3L
- Molding Compound: Green (if applicable)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Characteristics | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| IDSS | VDS =-12V,VGS = 0V | -1 | A | |||
| IGSS | VGS =8V, VDS = 0V | 0.1 | A | |||
| VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1 | V | ||
| RDS(on) | VGS =-4.5V, ID =-5A | 28 | m | |||
| Drain-Source On-Resistance | VGS =-3.7V, ID =-4.6A | 32 | m | |||
| VGS =-2.5V, ID =-4.3A | 40 | m | ||||
| VGS =-1.8V, ID =-1A | 63 | m | ||||
| VGS =-1.5V, ID =-0.5A | 150 | m | ||||
| Forward Tranconductance | gFS | VDS =-5V, ID =-5A | 18 | S | ||
| Dynamic Characteristics | Ciss | VDS =-6V,VGS =0V,f =1MHz | 1275 | pF | ||
| Coss | 255 | pF | ||||
| Crss | 236 | pF | ||||
| Gate Charge | Qg | VDS =-6V,VGS =-4.5V,ID=-5A | 14 | 21 | nC | |
| Qgs | 2.3 | nC | ||||
| Qgd | 3.6 | nC | ||||
| Switching Times | td(on) | VDD=-6V,VGEN=-4.5V,ID=-4A RL=6,RGEN=1 | 26 | 40 | ns | |
| tr | 24 | 40 | ns | |||
| td(off) | 45 | 70 | ns | |||
| tf | 20 | 35 | ns | |||
| Source-Drain Diode | IS | TC=25 | -1.4 | A | ||
| VSD | VGS =0V, IS=-4A | -1.2 | V | |||
| Diode Reverse Recovery | trr | IF=-4A,dI/dt=100A/s | 24 | 48 | ns | |
| Diode Reverse Recovery Charge | Qrr | 8 | 16 | nC | ||
| Absolute Maximum Ratings | VDS | -12 | V | |||
| VGS | 8 | V | ||||
| ID | -6 | A | ||||
| IDM | Pulsed Drain Current (t=300s) | -20 | A | |||
| PD | Power Dissipation | 0.4 | W | |||
| RJA | Thermal Resistance from Junction to Ambient | 312.5 | /W | |||
| TJ | Junction Temperature | 150 | ||||
| TSTG | Storage Temperature | -55 | +150 |
2410121655_JSCJ-CJK2333_C504109.pdf
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