N Channel Power MOSFET JSCJ CJAB65N04 with High Density Cell Design and Excellent Thermal Management
Key Attributes
Model Number:
CJAB65N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
65A
RDS(on):
6mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
247pF
Number:
1 N-channel
Output Capacitance(Coss):
420pF
Pd - Power Dissipation:
57W
Input Capacitance(Ciss):
3.54nF
Gate Charge(Qg):
54nC@4.5V
Mfr. Part #:
CJAB65N04
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB65N04 is an N-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capabilities, making it suitable for a wide range of applications including SMPS, general purpose, hard switched and high frequency circuits, and uninterruptible power supplies. Its high density cell design ensures ultra-low RDS(ON) and good stability with high EAS, while the lead-free product acquisition and excellent package design contribute to good heat dissipation and power management.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB65N04
- Product Type: Plastic-Encapsulate MOSFET
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 40 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 1.0 | A | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 4.8 | 6.0 | m | |
| VGS =4.5V, ID =10A | 6.2 | 8.0 | m | |||
| Forward transconductance | gFS | VDS =10V, ID =10A | 15 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 3540 | pF | ||
| Output capacitance | Coss | 420 | pF | |||
| Reverse transfer capacitance | Crss | 247 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=32V, VGS=4.5V, ID=10A | 25.2 | nC | ||
| Gate-source charge | Qgs | 5.3 | nC | |||
| Gate-drain charge | Qgd | 12.5 | nC | |||
| Turn-on delay time | td(on) | VDS=20V,ID=1A, VGS=10V,RG=3 | 13.7 | ns | ||
| Turn-on rise time | tr | 19.2 | ns | |||
| Turn-off delay time | td(off) | 40 | ns | |||
| Turn-off fall time | tf | 13 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 65 | A | |||
| Pulsed drain-source diode forward current | ISM | 240 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 65 | A | |||
| Pulsed Drain Current | IDM | 240 | A | |||
| Single Pulsed Avalanche Energy | EAS | 120 | mJ | |||
| Power Dissipation | PD | TC=25 | 57 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 83.3 | /W | |||
| Thermal Resistance Junction to Case | RJC | 2.2 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2410122025_JSCJ-CJAB65N04_C19269014.pdf
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