JSCJ AD 2SK3018 Plastic Encapsulated N Channel MOSFET Featuring Low On Resistance and Fast Switching
Key Attributes
Model Number:
AD-2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
13pF
Gate Charge(Qg):
-
Mfr. Part #:
AD-2SK3018
Package:
SOT-23
Product Description
Product Overview
The AD-2SK3018 is an N-Channel Power MOSFET encapsulated in plastic, designed for low-voltage drive applications. It features low on-resistance and fast switching speeds, making it suitable for portable equipment and easily designed drive circuits. This device is also easily paralleled and is AEC-Q101 qualified.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Product Code: AD-2SK3018
- Material: Plastic-Encapsulated
- Certifications: AEC-Q101 qualified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | ±20 | V | |||
| Continuous drain current | ID | 0.1 | A | |||
| Maximum power dissipation | PD | 0.35 | W | |||
| Thermal resistance from junction to ambient | RθJA | 357 | °C/W | |||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | VDS | VGS = 0V, ID = 10µA | 30 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS = 30V, VGS = 0V | - | - | 0.2 | µA |
| Gate-body leakage current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±2 | µA |
| Gate threshold voltage | VGS(th) | VDS = 3V, ID = 100µmA | 0.8 | 1.5 | - | V |
| Drain-source on-state resistance | RDS(on) | VGS = 4V, ID = 10mA | - | 5 | 8 | Ω |
| Drain-source on-state resistance | RDS(on) | VGS = 2.5V, ID = 1mA | - | 8 | 13 | Ω |
| Forward Transconductance | GFS | VDS = 3V, ID = 10 mA | - | 20 | - | mS |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS = 5V, VGS = 0V, f = 1MHz | - | 13 | - | pF |
| Output capacitance | Coss | - | 9 | - | pF | |
| Reverse transfer capacitance | Crss | - | 4 | - | pF | |
| Switching Parameters | ||||||
| Turn-on delay time | td(on) | VGS = 5V, VDD = 5V, ID = 10Ma.Rg = 10Ω, RL = 500Ω | - | 15 | - | ns |
| Rise Time | tr | - | 35 | - | ns | |
| Turn-off delay time | td(off) | - | 80 | - | ns | |
| Fall Time | tf | - | 80 | - | ns | |
2410121714_JSCJ-AD-2SK3018_C2975615.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
