N Channel Enhancement Mode MOSFET JSCJ CJ3406 Suitable for Load Switch and Pulse Width Modulation
Key Attributes
Model Number:
CJ3406
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
39pF
Number:
1 N-channel
Input Capacitance(Ciss):
375pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
CJ3406
Package:
SOT-23
Product Description
Product Overview
The CJ3406 is an N-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 3.6 | A | |||
| Drain Current-Pulsed | IDM | (note 1) | 15 | A | ||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 3 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3.6A | 65 | m | ||
| VGS =4.5V, ID =2.8A | 105 | m | ||||
| Forward tranconductance | gFS | VDS =5V, ID =3.6A (note 2) | 3 | S | ||
| Diode forward voltage | VSD | IS=1A | 1 | V | ||
| Dynamic Parameters | ||||||
| Input capacitance | Ciss | 375 | pF | |||
| Output capacitance | Coss | 57 | pF | |||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 39 | pF | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 6 | |||
| Switching Parameters | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.2,RGEN=3 | 4.6 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=15V, RL=2.2,RGEN=3 | 1.9 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=15V, RL=2.2,RGEN=3 | 20.1 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=2.2,RGEN=3 | 2.6 | ns | ||
2410121342_JSCJ-CJ3406_C81781.pdf
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