High current capability and fast switching JSCJ CJU10N10 N Channel Power MOSFET for power management
Key Attributes
Model Number:
CJU10N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
90pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
690pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
CJU10N10
Package:
TO-252-2L
Product Description
Product Overview
The CJU10N10 N-Channel Power MOSFET offers excellent RDS(ON), low gate charge, and operation with low gate voltages. Its design makes it suitable for load switching and PWM applications, providing fast switching capability and good heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: U10N10
- Packaging: TO-252-2L Plastic-Encapsulate MOSFETS
- Molding Compound: Green molding compound device (if solid dot is present)
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 9.6 | A | ||
| Pulsed Drain Current | IDM | 38.4 | A | |||
| Single Pulsed Avalanche Energy | EAS | (note1) | 150 | mJ | ||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes | TL | 1/8from case for 5 seconds | 260 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.2 | 2.0 | 2.5 | V |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =5A | 0.115 | 0.14 | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 690 | pF | ||
| Output capacitance | Coss | VDS =25V,VGS =0V,f =1MHz | 120 | pF | ||
| Reverse transfer capacitance | Crss | VDS =25V,VGS =0V,f =1MHz | 90 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=30V, RG=2.5, ID =2A, VGS =10V | 11 | ns | ||
| Turn-on rise time | tr | VDD=30V, RG=2.5, ID =2A, VGS =10V | 7.4 | ns | ||
| Turn-off delay time | td(off) | VDD=30V, RG=2.5, ID =2A, VGS =10V | 35 | ns | ||
| Turn-off fall time | tf | VDD=30V, RG=2.5, ID =2A, VGS =10V | 9.1 | ns | ||
| Total Gate Charge | Qg | VDS =30V,VGS =10V,ID =3A | 15.5 | nC | ||
| Gate-Source Charge | Qgs | VDS =30V,VGS =10V,ID =3A | 3.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS =30V,VGS =10V,ID =3A | 4.7 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS = 0V, IS =9A (note2) | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 9.6 | A | |||
| Pulsed drain-source diode forward current | ISM | 38.4 | A | |||
2410121930_JSCJ-CJU10N10_C2686820.pdf
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