P Channel Power MOSFET JSCJ CJAB14P04 with Ultra Low RDS ON and High Avalanche Voltage Stability
Key Attributes
Model Number:
CJAB14P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
98mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
410pF
Number:
1 P-Channel
Output Capacitance(Coss):
592pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
3.4nF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
CJAB14P04
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB14P04 is a P-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. Its high-density cell design offers ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity. The excellent package design ensures good heat dissipation, and special process technology provides high ESD capability. This MOSFET is suitable for battery and loading switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB14P04
- Package: PDFNWB3.33.3-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-32V, VGS =0V | -1.0 | A | ||
| TJ =125 | -50 | A | ||||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.7 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-6A | 68 | m | ||
| VGS =-4.5V, ID =-4A | 98 | m | ||||
| Forward transconductance | gFS | VDS =-10V, ID =-10A | 22 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 1700 | pF | ||
| Output capacitance | Coss | 296 | pF | |||
| Reverse transfer capacitance | Crss | 205 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=-10V, VDS=-15V, ID=-10A | 3400 | pC | ||
| Gate-source charge | Qgs | 592 | pC | |||
| Gate-drain charge | Qgd | 410 | pC | |||
| Turn-on delay time | td(on) | VDS=-15V,ID=-1A VGS=-10V,RG=2.5, RL=15 | 12 | ns | ||
| Turn-on rise time | tr | 18 | ns | |||
| Turn-off delay time | td(off) | 68 | ns | |||
| Turn-off fall time | tf | 98 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-6A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -14 | A | |||
| Pulsed drain-source diode forward current | ISM | -56 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -14 | A | |||
| Pulsed Drain Current | IDM | -56 | A | |||
| Single Pulsed Avalanche Energy | EAS | 83.3 | mJ | |||
| Thermal Resistance from Junction to Ambient | RJA | 20 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 4.1 | /W | |||
| Maximum Power Dissipation | PD | TC=25 | 30 | W | ||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2410121837_JSCJ-CJAB14P04_C20607693.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
