Low Gate Charge P Channel Power MOSFET JSCJ CJM1216 Suitable for PWM and Load Switching Applications
Key Attributes
Model Number:
CJM1216
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
590pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
CJM1216
Package:
DFN-6L(2x2)
Product Description
Product Overview
The CJM1216 is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(on), low gate charge, and operates with low gate voltage, making it suitable for load switching and various other applications like PWM, load switch, and battery charge in cellular handsets.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJM1216
- Package: DFNWB22-6L-J
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-12V, VGS =0V | -1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -0.7 | -1 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-6.7A | 13 | 21 | m | |
| VGS =-2.5V, ID =-6.2A | 18 | 27 | ||||
| Forward Transconductance | gFS | VDS =-10V, ID =-6.7A | 40 | S | ||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 2700 | pF | ||
| Output Capacitance | Coss | 680 | ||||
| Reverse Transfer Capacitance | Crss | 590 | ||||
| Total Gate Charge | Qg | VDS =-6V,VGS =-8V,ID =-10A | 60 | 100 | nC | |
| VDS =-6V,VGS =-4.5V,ID =-10A | 35 | 48 | ||||
| Gate-Source Charge | Qgs | 5 | nC | |||
| Gate-Drain Charge | Qgd | 10 | nC | |||
| Diode Forward Current | IS | -16 | A | |||
| Diode Forward Voltage | VSD | VGS =0V, ISD=-8A | -1.2 | V | ||
| Drain-Source Voltage | VDSS | -12 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Drain Current-Continuous | ID | -16 | A | |||
| Drain Current-Pulsed | IDM | (note 1) | -65 | A | ||
| Power Dissipation (Ta=25) | PD | (note 2) | 2.5 | W | ||
| Maximum Power Dissipation (Tc=25) | PD | (note 3) | 18 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (note 4) | 50 | /W | ||
| Thermal Resistance Junction to Case | RJC | (note 4) | 6.9 | /W | ||
| Operating Junction and Storage Temperature Range | Tj ,TSTG | -55 | +150 |
2410121819_JSCJ-CJM1216_C89271.pdf
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