Low Gate Charge N Channel Enhancement Mode Field Effect Transistor JSCJ CJ3404 Suitable for PWM and Load Switch Circuits
Key Attributes
Model Number:
CJ3404
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Input Capacitance(Ciss):
820pF
Pd - Power Dissipation:
-
Mfr. Part #:
CJ3404
Package:
SOT-23
Product Description
CJ3404 N-Channel Enhancement Mode Field Effect Transistor
The CJ3404 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. The separated source leads facilitate a Kelvin connection for bypassing source inductance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
- Type: N-Channel Enhancement Mode Field Effect Transistor
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | ±20 | V | |||
| Continuous drain current (t ≤10s) | ID | 5.8 | A | |||
| Pulsed drain current * | IDM | 30 | A | |||
| Thermal resistance from junction to ambient | RθJA | 357 | °C/W | |||
| Junction temperature | TJ | 150 | °C | |||
| Storage temperature | Tstg | -55 | ~ | 150 | °C | |
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V (BR) DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1 | 1.4 | 3 | V |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =10V, ID =5.8A | 23 | 30 | mΩ | |
| VGS =4.5V, ID =4.8A | 31 | 42 | mΩ | |||
| Forward tranconductance (note 1) | gFS | VDS =5V, ID =5.8A | 5 | S | ||
| Diode forward voltage | VSD | IS=1A | 1 | V | ||
| DYNAMIC PARAMETERS (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 820 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 118 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 85 | pF | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 1.5 | Ω | ||
| SWITCHING PARAMETERS(note 2) | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω | 6.5 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω | 3.1 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω | 15.1 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω | 2.7 | ns | ||
| MARKING | ||||||
| Equivalent Circuit | ||||||
| V(BR)DSS | 30V | |||||
| RDS(on)MAX | 30mΩ@ 10V | |||||
| 42mΩ@4.5V | ||||||
| ID | 5.8A | |||||
| PACKAGE OUTLINE DIMENSIONS | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||||
| A | 0.900 - 1.150 | 0.035 - 0.045 | ||||
| A1 | 0.000 - 0.100 | 0.000 - 0.004 | ||||
| A2 | 0.900 - 1.050 | 0.035 - 0.041 | ||||
| b | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| c | 0.080 - 0.150 | 0.003 - 0.006 | ||||
| D | 2.800 - 3.000 | 0.110 - 0.118 | ||||
| E | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| E1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| e | 1.800 - 2.000 | 0.071 - 0.079 | ||||
| e1 | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L | 0.550 REF | 0.022 REF | ||||
| L1 | ||||||
| θ | 0° - 8° | 0° - 8° | ||||
2410121314_JSCJ-CJ3404_C71151.pdf
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