High Density Cell Design N Channel MOSFET JSCJ 2N7002W with Low RDS ON and Switching Characteristics
Key Attributes
Model Number:
2N7002W
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-
RDS(on):
5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002W
Package:
SOT-323
Product Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD - 2N7002W MOSFET (N-Channel)
The 2N7002W is a high-density cell design N-Channel MOSFET in a SOT-323 package, offering a voltage-controlled small signal switch with ruggedness and reliability. Its key advantages include high saturation current capability and low RDS(ON). This MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by brand name)
- Material: Plastic-Encapsulate (SOT-323)
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-Threshold Voltage | V(GS)th | VDS=VGS, ID=250 A | 1 | 1.6 | 2.5 | V |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=20 V | 80 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| On-state Drain Current | ID(on) | VGS=10 V, VDS=7 V | 500 | mA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=500mA | 0.9 | 5 | ||
| Drain-Source On-Resistance | RDS(on) | VGS=5 V, ID=50mA | 1.1 | 7 | ||
| Forward Transconductance | gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | |
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 0.5 | 3.75 | V | |
| Drain-source on-voltage | VDS(on) | VGS=5V, ID=50mA | 0.05 | 0.375 | V | |
| Diode Forward Voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| Turn-on Time | td(on) | VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25 | 20 | ns | ||
| Turn-off Time | td(off) | VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25 | 40 | ns |
2410121512_JSCJ-2N7002W_C190607.pdf
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