Load Switching MOSFET JSCJ CJ2307 P Channel with 2.7A Continuous Current and Low On State Resistance
Key Attributes
Model Number:
CJ2307
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
138mΩ@4.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
51pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
340pF@15V
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
6.2nC@4.5V
Mfr. Part #:
CJ2307
Package:
SOT-23
Product Description
Product Overview
The CJ2307 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices. It offers a 30V drain-source voltage and a continuous drain current of -2.7A, providing efficient power management for portable electronics.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJ2307
- Package Type: SOT-23
- Material: Plastic-Encapsulate
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Electrical Characteristics | ||||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -1 | -3 | V | |
| Gate-Source Leakage | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-30V, VGS =0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-30V, VGS =0V, TJ=55 | -10 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-2.5A | 0.110 | 0.138 | ||
| Drain-Source On-State Resistance | RDS(on) | VGS =-10V, ID =-3.5A | 0.073 | 0.088 | ||
| Forward Transconductance | gfs | VDS =-10V, ID =-3.5A | 7 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 340 | pF | ||
| Output Capacitance | Coss | 67 | pF | |||
| Reverse Transfer Capacitance | Crss | 51 | pF | |||
| Total Gate Charge | Qg | VDS =-15V,VGS =-4.5V, ID =-2.5A | 4.1 | 6.2 | nC | |
| Gate-Source Charge | Qgs | 1.3 | nC | |||
| Gate-Drain Charge | Qgd | 1.8 | nC | |||
| Gate Resistance | Rg | f =1MHz | 10 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V, RL=15, ID =-1A, VGEN=-4.5V,Rg=1 | 40 | 60 | ns | |
| Rise Time | tr | 40 | 60 | ns | ||
| Turn-Off Delay Time | td(off) | 20 | 40 | ns | ||
| Fall Time | tf | 17 | 30 | ns | ||
| Body Diode Characteristics | ||||||
| Body Diode Voltage | VSD | IS=-0.75A, ,VGS =0 | -0.8 | -1.2 | V | |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | -2.7 | A |
| Continuous Source-Drain Current | IS | -0.91 | A |
| Power Dissipation | PD | 1.1 | W |
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 114 | /W |
| Operating Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55 ~+150 |
2410121631_JSCJ-CJ2307_C77900.pdf
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