Low RDS ON and High Stability P Channel Power MOSFET JSCJ CJAB55P03 Suitable for Battery Applications
Key Attributes
Model Number:
CJAB55P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
550pF
Number:
1 P-Channel
Output Capacitance(Coss):
830pF
Pd - Power Dissipation:
59W
Input Capacitance(Ciss):
5.9nF
Gate Charge(Qg):
34.3nC@4.5V
Mfr. Part #:
CJAB55P03
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB55P03 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery and loading switching. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB55P03
- Package: PDFNWB3.33.3-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -55 | A | |||
| Pulsed Drain Current | IDM | -200 | A | |||
| Single Pulsed Avalanche Energy | EAS | 150 | mJ | |||
| Power Dissipation | PD | 59 | W | |||
| Thermal Resistance from Junction to Ambient | RθJA | 83.3 | °C/W | |||
| Thermal Resistance from Junction to Case | RθJC | 2.1 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | °C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.0 | -1.6 | -2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =-10V, ID =-10A | 8.0 | mΩ | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =-4.5V, ID =-8A | 11.5 | mΩ | ||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 3282 | pF | ||
| Output capacitance | Coss | 413 | pF | |||
| Reverse transfer capacitance | Crss | 273 | pF | |||
| Total gate charge | Qg | VGS=-4.5V, VDS=-15V, ID=-10A | 34.3 | nC | ||
| Gate-source charge | Qgs | VGS=-4.5V, VDS=-15V, ID=-10A | 11 | nC | ||
| Gate-drain charge | Qgd | VGS=-4.5V, VDS=-15V, ID=-10A | 10 | nC | ||
| Turn-on delay time | td(on) | VDD=-15V,ID=-1A, VGS=-10V,RG=6Ω | 25 | ns | ||
| Turn-on rise time | tr | 11 | ns | |||
| Turn-off delay time | td(off) | 136 | ns | |||
| Turn-off fall time | tf | 49 | ns | |||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-10A | -0.5 | -1.0 | V | |
| Continuous drain-source diode forward current | IS | -55 | A | |||
| Pulsed drain-source diode forward current | ISM | -200 | A | |||
| Forward transconductance | gFS | VDS =-10V, ID =-8A | 16 | S | ||
2410121912_JSCJ-CJAB55P03_C2910050.pdf
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