JSMSEMI FDS4675 NL JSM P Channel Enhancement Mode MOSFET Designed for Low RDS ON and Power Electronics
Key Attributes
Model Number:
FDS4675-NL-JSM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V,11A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
180pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.5nF@20V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
FDS4675-NL-JSM
Package:
SOP-8
Product Description
Product Overview
The FDS4675-NL is a -40V P-Channel Enhancement Mode MOSFET designed for reliable and rugged performance. It features low on-state resistance, with RDS(ON) of 13m (typ.) at VGS=-10V and 18m (typ.) at VGS=-4.5V. This device is suitable for power management applications, particularly in LCD TV inverters. Lead-free and green device options are available, complying with RoHS standards.
Product Attributes
- Brand: JSMICRO Semiconductor
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -40 | V | |||
| Gate-Source Voltage | VGSS | 25 | V | |||
| Continuous Drain Current (VGS=-10V) | ID | TA=25C | -11 | - | A | |
| Continuous Drain Current (VGS=-10V) | ID | TA=70C | -9 | A | ||
| Pulsed Drain Current (VGS=-10V) | IDM | TA=25C, t 300s | -44 | A | ||
| Diode Continuous Forward Current | IS | -3 | A | |||
| Avalanche Current, Single pulse (L=0.1mH) | IAS | -33 | A | |||
| Avalanche Energy, Single pulse (L=0.1mH) | EAS | 54 | mJ | |||
| Maximum Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Maximum Power Dissipation | PD | TA=25C (Steady State) | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=70C (Steady State) | 2.0 | W | ||
| Thermal Resistance-Junction to Ambient | RJA | TA=25C (t 10sec) | 40 | C/W | ||
| Thermal Resistance-Junction to Ambient | RJA | TA=70C (t 10sec) | 75 | C/W | ||
| Thermal Resistance-Junction to Lead | RJL | Steady State | 4 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=-250A | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-32V, VGS=0V | -1 | -30 | A | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-32V, VGS=0V, TJ=85C | -1 | -100 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -1.9 | - | -2.4 | V |
| Gate Leakage Current | IGSS | VGS=25V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=-10V, IDS=-11A | 13 | 18 | m | |
| Drain-Source On-state Resistance | RDS(ON) | VGS=-4.5V, IDS=-7A | 18 | 22 | m | |
| Diode Forward Voltage | VSD | ISD=-1A, VGS=0V | -0.75 | - | V | |
| Reverse Recovery Time | trr | ISD=-11A, dlSD/dt=100A/s | 18 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=-11A, dlSD/dt=100A/s | 24 | nC | ||
| Input Capacitance | Ciss | VGS=0V,VDS=0V,F=1MHz | 1500 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-20V, Frequency=1.0MHz | 235 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-20V, Frequency=1.0MHz | 180 | pF | ||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.3 | |||
| Turn-on Delay Time | td(ON) | VDD=-20V, RL=20, IDS=-1A, VGEN=-10V, RG=6 | 14 | ns | ||
| Turn-on Rise Time | tr | 12 | ns | |||
| Turn-off Delay Time | td(OFF) | 41 | ns | |||
| Turn-off Fall Time | tf | 22 | ns | |||
| Total Gate Charge | Qg | VDS=-20V, VGS=-10V, IDS=-11A | 32 | nC | ||
| Gate-Source Charge | Qgs | VDS=-20V, VGS=-10V, IDS=-11A | 5.2 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-20V, VGS=-10V, IDS=-11A | 8 | nC | ||
2401051657_JSMSEMI-FDS4675-NL-JSM_C7462822.pdf
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