Power MOSFET N and P Channel JSMSEMI JSM4606 Designed for Level Shifted High Side Switching Circuits
Key Attributes
Model Number:
JSM4606
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A;6.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
1.6V;1.3V
Reverse Transfer Capacitance (Crss@Vds):
61pF@15V;102pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
398pF@15V;930pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
7.5nC@10V;20nC@10V
Mfr. Part #:
JSM4606
Package:
SOP-8
Product Description
JSM4606 N and P-Channel Enhancement Mode Power MOSFET
The 4606 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge. This complementary MOSFET pair is suitable for forming level-shifted high-side switches and a variety of other applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Type: N and P-Channel Enhancement Mode Power MOSFET
- Package: SOP-8
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | N-Channel | P-Channel | Unit |
|---|---|---|---|
| General Features | |||
| VDS | 30V | -30V | V |
| ID | 6.9A | -6.0A | A |
| RDS(ON) @ VGS=10V / -10V | < 21m | < 45m | m |
| High power and current handing capability | Yes | Yes | |
| Absolute Maximum Ratings (TA=25) | |||
| Drain-Source Voltage (VDS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | 20 | 20 | V |
| Continuous Drain Current (ID) (TA=25) | 6.9 | -6.0 | A |
| Pulsed Drain Current (IDM) | 28 | -26 | A |
| Maximum Power Dissipation (PD) (TA=25) | 2.0 | 2.0 | W |
| Operating Junction and Storage Temperature Range (TJ,TSTG) | -55 To 150 | ||
| Thermal Characteristic | |||
| Thermal Resistance, Junction-to-Ambient (RJA) (Note 2) | 63.5 | 63.5 | /W |
| N-Channel Electrical Characteristics (TA=25) | |||
| Drain-Source Breakdown Voltage (BVDSS) (VGS=0V, ID=250A) | 30 | V | |
| Zero Gate Voltage Drain Current (IDSS) (VDS=24V, VGS=0V) | - | 50 | A |
| Gate-Body Leakage Current (IGSS) (VGS=20V, VDS=0V) | - | 100 | nA |
| Gate Threshold Voltage (VGS(th)) (VDS=VGS, ID=250A) | 1.2 - 2.4 | V | |
| Drain-Source On-State Resistance (RDS(ON)) (VGS=10V, ID=6.9A) | - 21 | m | |
| Forward Transconductance (gFS) (VDS=5V, ID=5.0A) | 5 - | S | |
| Input Capacitance (Clss) | - 398 | PF | |
| Output Capacitance (Coss) | - 67 | PF | |
| Reverse Transfer Capacitance (Crss) (VDS=15V, VGS=0V, F=1.0MHz) | - 61 | PF | |
| Turn-on Delay Time (td(on)) | - 8.0 | nS | |
| Turn-on Rise Time (tr) | - 11.5 | nS | |
| Turn-Off Delay Time (td(off)) | - 17 | nS | |
| Turn-Off Fall Time (tf) (VDD=15V, RL=15, VGS=10V, RGEN=6) | - 7.5 | nS | |
| Total Gate Charge (Qg) | - 7.5 | nC | |
| Gate-Source Charge (Qgs) | - 1.7 | nC | |
| Gate-Drain Charge (Qg) (VDS=10V, ID=1.0A, VGS=10V) | - 1.3 | nC | |
| Diode Forward Voltage (VSD) (VGS=0V, IS=2A) | - 1.0 | V | |
| Drain-Source On-State Resistance (RDS(ON)) (VGS=4.5V, ID=5A) | - 32 | m | |
| P-Channel Electrical Characteristics (TA=25) | |||
| Drain-Source Breakdown Voltage (BVDSS) (VGS=0V, ID=-250A) | -30 | V | |
| Zero Gate Voltage Drain Current (IDSS) (VDS=-24V, VGS=0V) | - -50 | A | |
| Gate-Body Leakage Current (IGSS) (VGS=20V, VDS=0V) | - 100 | nA | |
| Gate Threshold Voltage (VGS(th)) (VDS=VGS, ID=-250A) | -1.0 - -2.0 | V | |
| Drain-Source On-State Resistance (RDS(ON)) (VGS=-10V, ID=-6.0A) | - 45 | m | |
| Forward Transconductance (gFS) (VDS=-5V, ID=-5.0A) | 10 - | S | |
| Input Capacitance (Clss) | - 930 | PF | |
| Output Capacitance (Coss) | - 121 | PF | |
| Reverse Transfer Capacitance (Crss) (VDS=-15V, VGS=0V, F=1.0MHz) | - 102 | PF | |
| Turn-on Delay Time (td(on)) | - 9.5 | nS | |
| Turn-on Rise Time (tr) | - 5.4 | nS | |
| Turn-Off Delay Time (td(off)) | - 42.5 | nS | |
| Turn-Off Fall Time (tf) (VDD=-15V, RL=5.0, VGS=-10V, RGEN=6) | - 13.6 | nS | |
| Total Gate Charge (Qg) | - 20 | nC | |
| Gate-Source Charge (Qgs) | - 4.1 | nC | |
| Gate-Drain Charge (Qg) (VDS=-15V, ID=-3.0A, VGS=-10V) | - 2.6 | nC | |
| Diode Forward Voltage (VSD) (VGS=0V, IS=-2.0A) | - 1.0 | V | |
| Drain-Source On-State Resistance (RDS(ON)) (VGS=-4.5V, ID=-5.0A) | - 60 | m | |
2308071513_JSMSEMI-JSM4606_C917082.pdf
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