N Channel MOSFET JSMSEMI 2SK3018 Low Conduction Resistance Fast Switching Speed Suitable for Circuit
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
RDS(on):
13Ω@2.5V,1mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Number:
1 N-channel
Input Capacitance(Ciss):
13pF@5V
Pd - Power Dissipation:
350mW
Mfr. Part #:
2SK3018
Package:
SOT-323
Product Description
Product Overview
The 2SK3018 is an N-Channel MOSFET designed for general switching circuits. It offers low conduction resistance, fast switching speed, and low voltage drive capabilities, making it suitable for various general switching applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: 2SK3018
- Channel Type: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit | |
| Absolute Maximum Ratings (Ta=25) | Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGSS | 20 | V | ||
| Continuous Drain Current | ID | 0.1 | A | ||
| Power Dissipation | PD | 0.35 | W | ||
| Thermal Resistance (Junction to Ambient) | RJA | 350 | /mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55150 | |||
| Drain-Source Breakdown Voltage | VBR(DSS) | VGS=0V,ID=10A | 30 | V | |
| Electrical Characteristics (Ta=25) | Gate Threshold Voltage | VGS(th) | ID=100A, VDS=3V | 0.8 - 1.5 | V |
| Gate Leakage Current | IGSS | VGS=20V,VDS=0V | 500 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=30V | 0.2 | A | |
| Drain ON-State Current | ID(ON) | VGS=10V, VDS=7V | 500 | mA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4V,ID=10mA | 8 | ||
| VGS=2.5V,ID=1mA | 13 | ||||
| Forward Transconductance | gfs | VDS=3V,ID=10mA | 20 | mS | |
| Drain-Source On-State Voltage | VDS(ON) | VGS=10V,ID=500mA | 0.5 - 3.75 | V | |
| VGS=5V,ID=50mA | 0.05 - 0.375 | V | |||
| Input Capacitance | Ciss | VDS=5V,VGS=0V,f=1MHz | 13 | pF | |
| Switching Characteristics | Output Capacitance | Coss | 9 | pF | |
| Turn-on Time | t(on) | VGS=5V, VDD=5V,ID=10mA, Rg=10, RL=500 | 15 | ns | |
| Rise Time | tr | 35 | ns | ||
| Turn-off Time | t(off) | 80 | ns | ||
| Fall Time | tf | 80 | ns |
2401051645_JSMSEMI-2SK3018_C916398.pdf
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