Dual NPN Transistor JTD JTDMMDT3904DW SOT363 Package Plastic Encapsulate Suitable for Amplification
Key Attributes
Model Number:
JTDMMDT3904DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
JTDMMDT3904DW
Package:
SOT-363
Product Description
Product Overview
The MMDT3904DW is a dual NPN transistor in a SOT-363 package, ideal for low power amplification and switching applications. It features epitaxial planar die construction for reliable performance.
Product Attributes
- Brand: JTD
- Origin: SHENZHEN JTD ELECTRONICS CO.,LTD
- Package Type: SOT-363
- Encapsulation: Plastic-Encapsulate Transistors
- Marking: K6N
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Breakdown Voltages | V(BR)CBO | IC=10A,IE=0 | 60 | V | ||
| V(BR)CEO | IC=1mA,IB=0 | 40 | V | |||
| V(BR)EBO | IE=10A,IC=0 | 5 | V | |||
| ICBO | VCB=30V,IE=0 | 0.05 | A | |||
| IEBO | VEB=5V,IC=0 | 0.05 | A | |||
| ICEX | VCE=30V,VBE(off)=3V | 0.05 | A | |||
| VCBO | IC=10A,IE=0 | 60 | V | |||
| DC Current Gain (hFE) | hFE(1) | VCE=1V,IC=0.1mA | 40 | |||
| hFE(2) | VCE=1V,IC=1mA | 70 | ||||
| hFE(3) | VCE=1V,IC=10mA | 100 | 300 | |||
| hFE(4) | VCE=1V,IC=50mA | 60 | ||||
| hFE(5) | VCE=1V,IC=100mA | 30 | ||||
| VCE=1V,IC=10mA | ||||||
| Collector-Emitter Saturation Voltage | VCE(sat)1 | IC=10mA,IB=1mA | 0.2 | V | ||
| VCE(sat)2 | IC=50mA,IB=5mA | 0.3 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat)1 | IC=10mA,IB=1mA | 0.65 | 0.85 | V | |
| VBE(sat)2 | IC=50mA,IB=5mA | 0.95 | V | |||
| Transition Frequency | fT | VCE=20V,IC=10mA,f=100MHz | 300 | MHz | ||
| Collector Output Capacitance | Cob | VCB=5V,IE=0,f=1MHz | 4 | pF | ||
| Noise Figure | NF | VCE=5V,Ic=0.1mA,f=1kHz,RS=1K | 5 | dB | ||
| Switching Times | td | 35 | nS | |||
| tr | VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA | 35 | nS | |||
| Switching Times | ts | 200 | nS | |||
| tf | VCC=3V, IC=10mA IB1=-IB2=1mA | 50 | nS | |||
| Collector Power Dissipation | PC | Ta=25 unless otherwise noted | 0.2 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 |
2504101957_JTD-JTDMMDT3904DW_C42443488.pdf
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