power management JSCJ CJCD2004 Dual N Channel MOSFET with low gate charge and ESD protection features
Key Attributes
Model Number:
CJCD2004
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.3mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
210pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.95nF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
CJCD2004
Package:
DFNWB2x3-6L
Product Description
Product Overview
The CJCD2004 is a Dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for use as a uni-directional or bi-directional load switch due to its common-drain configuration.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJCD2004
- Package: DFNWB23-6L-C
- Material: Plastic-Encapsulate
- Marking: CJCD2004
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =8V, VDS = 0V | 10 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS =4.5V, ID =3A | 6.3 | 7.3 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =4.0V, ID =3A | 6.5 | 7.8 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =3.8V, ID =3A | 7.0 | 8.2 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =3.1V, ID =3A | 7.5 | 9.0 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V, ID =3A | 8.2 | 9.7 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =1.5V, ID =3A | 11.0 | 12.5 | m | |
| Forward Transconductance | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode Forward Voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1950 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 250 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 210 | pF | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 17 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 2.0 | nC | ||
| Gate-Drain Charge | Qgd | VDS =10V,VGS =4.5V,ID =7A | 5.1 | nC | ||
| Turn-on Delay Time | td(on) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 2.2 | ns | ||
| Turn-on Rise Time | tr | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 5.9 | ns | ||
| Turn-off Delay Time | td(off) | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 40 | ns | ||
| Turn-off Fall Time | tf | VGS=5V,VDD=10V, RL=1.35,RGEN=3 | 90 | ns | ||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | Ta=25 | 10 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | 50 | A | ||
| Thermal Resistance Junction to Ambient | RJA | 83.3 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Lead Temperature for Soldering | TL | (1/8 from case for 10 s) | 260 |
2410121806_JSCJ-CJCD2004_C504181.pdf
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