High Side Switching Dual P Channel MOSFET JSCJ CJX3139K Featuring Low On Resistance and Fast Switching Speed
Key Attributes
Model Number:
CJX3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
520mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
2 P-Channel
Input Capacitance(Ciss):
170pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
CJX3139K
Package:
SOT-563
Product Description
Product Overview
The CJX3139K is a Dual P-Channel Power MOSFET designed using an advanced Power Trench process to optimize RDS(ON). It integrates two independent P-channel CJ3139K MOSFETs within a single package, making it suitable for high-side switching applications. Key features include low on-resistance, low threshold voltage, and fast switching speed, making it ideal for driver circuits, battery-operated systems, power supply converters, and load/power switching in portable devices.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-563
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source voltage | VDSS | -20 | V | |||
| Typical Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID(DC) | -0.66 | A | |||
| Drain Current -Pulsed(note1) | IDM(pulse) | -2.64 | A | |||
| Power Dissipation (note 2) | PD | 150 | mW | |||
| Thermal Resistance from Junction to Ambient | RJA | 833 | /W | |||
| Storage Temperature | Tj | -55 | +150 | |||
| Junction Temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-Threshold Voltage(note 3) | VGS(th) | VDS =VGS, ID =-250A | -0.35 | -1.1 | V | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =10V | 20 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-Source On-State Resistance(note 3) | RDS(on) | VGS =-4.5V, ID =-1A | 520 | m | ||
| VGS =-2.5V, ID =-800mA | 700 | |||||
| VGS =-1.8V, ID =-500mA | 950 | |||||
| Forward Transconductance | gFS | VDS =-10V, ID =-540mA | 0.8 | S | ||
| Dynamic Characteristics(note 4) | ||||||
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 170 | pF | ||
| Output Capacitance | Coss | 25 | ||||
| Reverse Transfer Capacitance | Crss | 15 | ||||
| Switching Times (note 4) | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V, ID=-200mA, VGS=-4.5V,RG=10 | 9 | ns | ||
| Rise Time | tr | 5.8 | ||||
| Turn-Off Delay Time | td(off) | 32.7 | ||||
| Fall Time | tf | 20.3 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage (note 3) | VSD | IS=-0.5A, VGS = 0V | -1.2 | V | ||
2410121917_JSCJ-CJX3139K_C504144.pdf
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