650V IGBT transistor JSCJ CGWT80N65F2KAD with 80A collector current and trench field stop technology
Key Attributes
Model Number:
CGWT80N65F2KAD
Product Custom Attributes
Pd - Power Dissipation:
390W
Td(off):
94ns
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
30pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@1mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
108.8nC@15V
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
870uJ
Turn-On Energy (Eon):
2.69mJ
Pulsed Current- Forward(Ifm):
240A
Output Capacitance(Coes):
256pF
Mfr. Part #:
CGWT80N65F2KAD
Package:
TO-247
Product Description
Product Overview
The CGWT80N65F2KAD is a high-performance IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure technology. It offers high application frequency, low Collector-Emitter Saturation Voltage (Vce(sat)), and low switching loss, making it suitable for parallel operation. Key features include a 650V breakdown voltage, positive temperature coefficient for Vce(sat), high-speed switching, and a fast/soft recovery freewheeling diode for good EMI behavior.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: TO-247
- Marking: WT80N65F2KAD
- Molding Compound: Green (if present, otherwise normal)
Technical Specifications
| Parameter | Symbol | Value | Units | Notes | |
| Absolute Maximum Ratings | VCES | 650 | V | ||
| VGES | ±20 | V | |||
| IC (Tc=100) | 80 | A | |||
| IC pulse | 240 | A | tp limited by TJmax | ||
| IF | 80 | A | Tc=100 | ||
| PD (Tc=25) | 390 | W | |||
| Thermal Characteristics | RJC (IGBT) | 0.32 | /W | ||
| RJC (Diode) | 0.6 | /W | |||
| RJA | 40 | /W | |||
| Electrical Characteristics (TJ=25C unless otherwise noted) | V(BR)CES | 650 | V | VGE=0V,ICE=1mA | |
| ICES | -- | 1.0 | mA | VGE=0V,VCE=650V | |
| IGES | -- | ±250 | nA | VGE=±20V | |
| VGE(th) | 4 | 6.5 | V | IC=1mA ,VCE=VGE | |
| VCE(sat) | -- | 1.7 | V | IC=80A,VGE=15V,TJ=25 | |
| VF | -- | 1.52 | V | IF=80A,Tc=25 | |
| Dynamic Parameters | Cies | -- | 2602 | pF | VCE=30V,VGE=0V f=1MHz |
| Coes | -- | 256 | pF | ||
| Cres | -- | 30 | pF | ||
| Rg | -- | 0.66 | |||
| Switching Parameters | td(on) | -- | 26 | ns | VCE=400V,IC=80A,Rg=10, VGE=15V, Inductive Load TJ=25 |
| tr | -- | 68 | ns | ||
| td(off) | -- | 94 | ns | ||
| tf | -- | 26 | ns | ||
| Eon | -- | 2.69 | mJ | Including the reverse recovery of the diode. | |
| Eoff | -- | 0.87 | mJ | ||
| Ets | -- | 3.56 | mJ | ||
| Gate Charge | QG | -- | 108.8 | nC | VCE = 480 V, IC = 80 A, VGE = 15 V |
| QGE | -- | 27.2 | nC | ||
| QGC | -- | 58.8 | nC | ||
| Diode Parameters | trr | -- | 90 | nS | VR = 400V, IF = 80A, diF/dt = 100A/s |
| Qrr | -- | 352 | nC |
2410121322_JSCJ-CGWT80N65F2KAD_C7543669.pdf
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