Compact dual transistor MOSFET JSCJ UM6K1N with low on resistance and independent transistor design

Key Attributes
Model Number: UM6K1N
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
RDS(on):
4Ω@4V;6Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
UM6K1N
Package:
SOT-363
Product Description

Product Overview

The UM6K1N is a dual N-channel MOSFET featuring two independent 2SK3018 transistors in a single package. This design eliminates mutual interference, reduces mounting cost and area by half, and offers low on-resistance. Its low voltage drive capability (2.5V) makes it ideal for portable equipment.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: Not specified
  • Material: Plastic-Encapsulate MOSFETs
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnits
Drain-Source Breakdown VoltageVDSVGS = 0V, ID = 10A30V
Zero Gate Voltage Drain CurrentIDSSVDS =30V,VGS = 0V1A
Gate Source leakage currentIGSSVGS =20V, VDS = 0V2A
Gate Threshold VoltageVGS(th)VDS = 3V, ID =100A0.81.21.5V
Drain-Source On-ResistanceRDS(on)VGS = 4V, ID =10mA48
Drain-Source On-ResistanceRDS(on)VGS =2.5V,ID =1mA613
Forward TransconductancegFSVDS =3V, ID = 10mA20mS
Input CapacitanceCissVDS =5V,VGS =0V,f =1MHz13pF
Output CapacitanceCoss9pF
Reverse Transfer CapacitanceCrss4pF
Turn-On Delay Timetd(on)VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=50015ns
Rise Timetr35ns
Turn-Off Delay Timetd(off)80ns
Fall Timetf80ns

2410121531_JSCJ-UM6K1N_C504139.pdf

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