Compact dual transistor MOSFET JSCJ UM6K1N with low on resistance and independent transistor design
Product Overview
The UM6K1N is a dual N-channel MOSFET featuring two independent 2SK3018 transistors in a single package. This design eliminates mutual interference, reduces mounting cost and area by half, and offers low on-resistance. Its low voltage drive capability (2.5V) makes it ideal for portable equipment.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: Not specified
- Material: Plastic-Encapsulate MOSFETs
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID = 10A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 2 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS = 3V, ID =100A | 0.8 | 1.2 | 1.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 4 | 8 | ||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V,ID =1mA | 6 | 13 | ||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 20 | mS | ||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | 9 | pF | |||
| Reverse Transfer Capacitance | Crss | 4 | pF | |||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | 35 | ns | |||
| Turn-Off Delay Time | td(off) | 80 | ns | |||
| Fall Time | tf | 80 | ns |
2410121531_JSCJ-UM6K1N_C504139.pdf
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