Power MOSFET N Channel P Channel JSCJ CJ7252KDW ideal for fast switching in load power and memory devices
Key Attributes
Model Number:
CJ7252KDW
Product Custom Attributes
Drain To Source Voltage:
60V;50V
Current - Continuous Drain(Id):
340mA;180mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V;8Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.3V;1.62V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF;5pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF;10pF
Input Capacitance(Ciss):
40pF;30pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ7252KDW
Package:
SOT-363
Product Description
Product Description
The CJ7252KDW is an N-Channel + P-Channel Power MOSFET designed using an advanced power trench process to optimize RDS(ON). It features high-side switching, low threshold, and fast switching speeds, making it suitable for applications such as relays, solenoids, memories, battery-operated systems, power supply converter circuits, and load/power switching in cell phones and pagers.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: 75
Technical Specifications
| Parameter | Symbol | N-Channel MOSFET Test Conditions | Min | Typ | Max | Unit | P-Channel MOSFET Test Conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS =0V, ID=250A | 60 | V | VGS = 0V, ID =-250A | -50 | V | ||||
| Zero gate voltage drain current | IDSS | VDS =48V,VGS = 0V | 1 | A | VDS =-50V,VGS = 0V | -15 | A | ||||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 10 | A | VGS =20V, VDS = 0V | 10 | nA | ||||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | 2.5 | V | VDS =VGS, ID =-250A | -0.9 | -1.62 | -2 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.2A | 1.1 | 5.3 | VGS =-5V, ID =-0.1A | 5.5 | 10 | ||||
| VGS =10V, ID =0.5A | 0.9 | 5 | VGS =-10V, ID =-0.1A | 4.1 | 8 | ||||||
| Diode forward voltage | VSD | IS=0.3A, VGS = 0V | 1.5 | V | IS=-0.13A, VGS = 0V | -2.2 | V | ||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | VDS =-5V,VGS =0V,f =1MHz | 30 | pF | ||||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | VDS =-5V,VGS =0V,f =1MHz | 10 | pF | ||||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | VDS =-5V,VGS =0V,f =1MHz | 5 | pF | ||||
| Turn-on delay time | td(on) | VGS=10V,VDD=50V, RL=250,RGEN=50 | 10 | ns | VDD=-15V, RL=50, ID =-2.5A | 2.5 | ns | ||||
| Turn-off delay time | td(off) | VGS=10V,VDD=50V, RL=250,RGEN=50 | 15 | ns | VDD=-15V, RL=50, ID =-2.5A | 16 | ns |
2410121655_JSCJ-CJ7252KDW_C504142.pdf
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